APTGT400U120D4G [MICROSEMI]
Single switch Trench + Field Stop IGBT Power Module; 单开关沟道+场站IGBT功率模块
| 型号： | APTGT400U120D4G |
| 厂家： | 
Microsemi |
| 描述： | Single switch Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT400U120D4G
Single switch
Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
•
•
•
•
Welding converters
1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
3
Features
5
•
Trench + Field Stop IGBT Technology
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-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
2
Low leakage current
RBSOA and SCSOA rated
•
•
•
•
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
650
400
800
±20
1785
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
800A@1050V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTGT400U120D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
750
2.1
µA
Tj = 25°C
1.4
5.0
1.7
2.0
5.8
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 12mA
VGE = 20V, VCE = 0V
6.5
600
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
28
nF
1.6
1.2
VGE=±15V, IC=400A
VCE=600V
QG
Gate charge
3.7
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
280
90
V
V
GE = ±15V
Bus = 600V
ns
ns
Td(off) Turn-off Delay Time
550
IC = 400A
RG = 1.8Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 400A
Tf
Td(on)
Tr
Fall Time
130
300
100
650
180
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf
Fall Time
RG = 1.8Ω
VGE = ±15V
Eon
Turn on Energy
Tj = 125°C
33
59
V
Bus = 600V
mJ
A
IC = 400A
RG = 1.8Ω
Eoff
Isc
Turn off Energy
Short Circuit data
Tj = 125°C
V
GE ≤15V ; VBus = 900V
1600
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
1200
V
Tj = 25°C
750
1000
IRRM
VR=1200V
µA
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
IF
400
1.6
1.6
250
350
40
A
V
IF = 400A
VGE = 0V
2.1
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 400A
VR = 600V
di/dt =4000A/µs
Qrr
Err
75
18
34
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APTGT400U120D4G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.07
0.13
°C/W
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
V
150
125
125
5
2
350
°C
Operating Case Temperature
M6
M4
Torque Mounting torque
Wt Package Weight
N.m
g
1
D4 Package outline (dimensions in mm)
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APTGT400U120D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
600
400
200
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
TJ=125°C
600
400
200
0
0
1
2
CE (V)
3
4
0
1
2
3
4
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
800
600
400
200
0
140
120
100
80
VCE = 600V
GE = 15V
G = 1.8 Ω
TJ = 125°C
Eoff
TJ=25°C
V
R
TJ=125°C
Eon
60
Er
40
TJ=125°C
20
Eon
0
0
100 200 300 400 500 600 700 800
C (A)
5
6
7
8
9
10
11
12
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
200
Reverse Bias Safe Operating Area
1000
800
600
400
200
0
VCE = 600V
GE =15V
C = 400A
175
150
125
100
75
V
Eon
I
TJ = 125°C
Eoff
Eoff
Er
VGE=15V
TJ=125°C
RG=1.8 Ω
50
25
0
0
400
800
1200
1600
0
2
4
6
8
10
12
14
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
IGBT
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT400U120D4G
Operating Frequency vs Collector Current
Forward Characteristic of diode
50
40
30
20
10
0
800
VCE=600V
D=50%
RG=1.8 Ω
TJ=125°C
TJ=25°C
600
Tc=75°C
ZVS
400
ZCS
200
TJ=125°C
Hard
switching
TJ=25°C
0
0
0.4
0.8
1.2
1.6
2
2.4
0
100
200
IC (A)
300
400
500
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.15
0.125
0.1
Diode
0.9
0.7
0.075
0.05
0.025
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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