APTGT450SK60 [MICROSEMI]
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, MODULE-5;![APTGT450SK60](http://pdffile.icpdf.com/pdf2/p00285/img/icpdf/APTGT450SK60_1704545_icpdf.jpg)
型号: | APTGT450SK60 |
厂家: | ![]() |
描述: | Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, MODULE-5 局域网 栅 功率控制 晶体管 |
文件: | 总5页 (文件大小:268K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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APTGT450SK60
Buck chopper
Trench + Field Stop IGBT®
VCES = 600V
IC = 450A @ Tc = 80°C
Application
•
•
AC and DC motor control
VBUS
Switched Mode Power Supplies
Q1
G1
Features
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
E1
OUT
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
G1
E1
VBUS
0/VBUS
OUT
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
550
450
600
±20
1750
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
900A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT450SK60
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
1.8
µA
Tj = 25°C
Tj = 150°C
1.4
1.5
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 450A
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
37
nF
Output Capacitance
2.3
1.1
130
55
250
60
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 450A
RG = 2.2Ω
Inductive Switching (150°C)
VGE = ±15V
145
60
320
80
ns
VBus = 300V
IC = 450A
Tf
Fall Time
RG = 2.2Ω
Eon
Eoff
Turn on Energy
Turn off Energy
7.8
15.7
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
VR=600V
500
750
IRM
Maximum Reverse Leakage Current
µA
Tj = 150°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 450A
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
450
1.5
A
V
1.9
VGE = 0V
1.4
125
220
20.3
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 450A
VR = 300V
di/dt =4000A/µs
Qrr
µC
Tj = 150°C
42.8
2 - 5
APT website – http://www.advancedpower.com
APTGT450SK60
Thermal and package characteristics
Symbol Characteristic
Min Typ Max
Unit
°C/W
V
IGBT
Diode
0.085
RthJC
Junction to Case
0.14
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
175
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGT450SK60
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
1000
800
600
400
200
0
1000
800
600
400
200
0
TJ = 150°C
TJ=25°C
VGE=13V
VGE=19V
TJ=125°C
TJ=150°C
VGE=15V
VGE=9V
TJ=25°C
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
1000
800
600
400
200
0
35
30
25
20
15
10
5
VCE = 300V
VGE = 15V
RG = 2.2Ω
TJ = 150°C
TJ=25°C
Eoff
Eon
TJ=125°C
TJ=150°C
Er
TJ=25°C
Eon
0
0
200
400
600
IC (A)
800
1000
5
6
7
8
9
10
11
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
1000
800
600
400
200
0
VCE = 300V
VGE =15V
IC = 450A
Eon
40
30
20
10
0
TJ = 150°C
Eoff
Er
Eoff
Eon
VGE=15V
TJ=150°C
RG=2.2Ω
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
APT website – http://www.advancedpower.com
APTGT450SK60
Operating Frequency vs Collector Current
Forward Characteristic of diode
1000
800
600
400
200
0
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=2.2Ω
ZCS
TJ=150°C
ZVS
Tc=85°C
TJ=125°C
Hard
switching
TJ=150°C
TJ=25°C
0
0.4
0.8
1.2
VF (V)
1.6
2
0
200
400
IC (A)
600
800
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.16
0.14
0.12
0.1
Diode
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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