APTGT450DU60G [MICROSEMI]
Dual common source Trench + Field Stop IGBT Power Module; 双共源沟道+场截止IGBT功率模块
| 型号： | APTGT450DU60G |
| 厂家： | 
Microsemi |
| 描述： | Dual common source Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT450DU60G
Dual common source
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 450A @ Tc = 80°C
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
C1
C2
Q1
Q2
G1
E1
G2
E2
Features
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
E
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
G1
E1
C1
E
C2
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
G2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
550
450
600
±20
1750
V
TC = 25°C
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
900A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT450DU60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
1.8
µA
Tj = 25°C
Tj = 150°C
1.4
1.5
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 450A
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
37
nF
Output Capacitance
2.3
1.1
130
55
250
60
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 450A
RG = 1Ω
Inductive Switching (150°C)
VGE = ±15V
145
60
320
ns
VBus = 300V
IC = 450A
Tf
Fall Time
80
RG = 1Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
2.25
4.2
12.8
15.7
VGE = ±15V
VBus = 300V
IC = 450A
Eon
Turn on Energy
mJ
mJ
Eoff
Turn off Energy
RG = 1Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
200
500
IRM
Maximum Reverse Leakage Current
VR=600V
µA
IF
DC Forward Current
450
1.5
1.4
A
V
IF = 450A
VGE = 0V
1.9
VF
Diode Forward Voltage
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
120
210
20.3
42.8
5.2
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 450A
VR = 300V
di/dt =4000A/µs
10.6
2 - 5
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APTGT450DU60G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max
Unit
°C/W
V
IGBT
Diode
0.085
RthJC
Junction to Case Thermal Resistance
0.14
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
175
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT450DU60G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
1000
800
600
400
200
0
1000
800
600
400
200
0
TJ = 150°C
TJ=25°C
VGE=13V
VGE=15V
VGE=19V
TJ=125°C
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
1000
800
600
400
200
0
35
30
25
20
15
10
5
VCE = 300V
VGE = 15V
TJ=25°C
Eoff
R
G = 1Ω
TJ = 150°C
Er
TJ=125°C
TJ=150°C
Eon
TJ=25°C
0
0
200
400
600
C (A)
800
1000
5
6
7
8
9
10
11
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
30
1000
800
600
400
200
0
Eoff
VCE = 300V
VGE =15V
I
C = 450A
Eon
20 TJ = 150°C
10
VGE=15V
TJ=150°C
RG=1Ω
Er
Eon
0
0
2
4
6
8
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT450DU60G
Operating Frequency vs Collector Current
Forward Characteristic of diode
1000
800
600
400
200
0
120
100
80
60
40
20
0
VCE =300V
D=50%
RG=1Ω
ZVS
ZCS
TJ=150°C
Tc=85°C
TJ=125°C
TJ=150°C
TJ=25°C
Hard
switching
0
0.4
0.8
1.2
F (V)
1.6
2
0
200
400
C (A)
600
800
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
Diode
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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