APTGT400U170D4G [MICROSEMI]
Single switch Trench + Field Stop IGBT Power Module; 单开关沟道+场站IGBT功率模块
| 型号： | APTGT400U170D4G |
| 厂家： | 
Microsemi |
| 描述： | Single switch Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT400U170D4G
Single switch
Trench + Field Stop IGBT
Power Module
VCES = 1700V
IC = 400A @ Tc = 80°C
Application
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
1
3
Features
•
Trench + Field Stop IGBT Technology
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-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
5
2
Low leakage current
RBSOA and SCSOA rated
•
•
•
•
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
800
400
800
±20
2080
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
800A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1 - 5
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APTGT400U170D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
5
mA
Tj = 25°C
2.0
2.4
5.8
2.4
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 16 mA
VGE = 20V, VCE = 0V
5.2
6.4
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
V
GE = 0V, VCE = 25V
33
1.2
nF
f = 1MHz
VGE=±15V, IC=400A
VCE=900V
QG
Gate charge
4.6
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
250
100
850
V
GE = ±15V
ns
VBus = 900V
IC = 400A
RG = 3.6Ω
Td(off) Turn-off Delay Time
Tf
Fall Time
120
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
300
100
V
GE = ±15V
ns
VBus = 900V
IC = 400A
RG = 3.6Ω
Td(off) Turn-off Delay Time
1000
200
Tf
Fall Time
V
GE = ±15V
Eon
Turn On Energy
Tj = 125°C
Tj = 125°C
135
125
VBus = 900V
IC = 400A
RG = 3.6Ω
mJ
A
Eoff
Isc
Turn Off Energy
Short Circuit data
V
GE ≤15V ; VBus = 1000V
1600
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC forward current
VRRM
IRRM
IF
1700
V
µA
A
Tj = 25°C
Tj = 125°C
Tc=80°C
750
1000
VR=1700V
400
1.8
1.9
50
IF = 400A
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.2
VF
Diode Forward Voltage
V
Err
trr
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
mJ
ns
96
IF = 400A
VR = 900V
di/dt =4200A/µs
420
525
100
170
Qrr
µC
2 - 5
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APTGT400U170D4G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.06
0.08
°C/W
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
3500
-40
-40
-40
3
V
150
125
125
5
2
350
°C
Operating Case Temperature
M6
M4
Torque Mounting torque
Wt Package Weight
N.m
g
1
D4 Package outline (dimensions in mm)
3 - 5
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APTGT400U170D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
600
400
200
0
VGE=20V
TJ = 125°C
700
600
500
400
300
200
100
0
TJ=25°C
TJ=125°C
VGE=13V
VGE=15V
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
800
700
600
500
400
300
200
100
0
400
300
200
100
0
TJ=25°C
VCE = 900V
VGE = 15V
Eon
RG = 3.6Ω
TJ = 125°C
Eoff
TJ=125°C
TJ=125°C
Er
0
100 200 300 400 500 600 700 800
C (A)
5
6
7
8
9
10
11
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
500
1000
800
600
400
200
0
VCE = 900V
V
GE =15V
400
300
200
100
0
Eon
IC = 400A
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=3.6Ω
0
400
800
1200 1600 2000
0
5
10
15
20
25
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
IGBT
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT400U170D4G
Operating Frequency vs Collector Current
Forward Characteristic of diode
25
20
15
10
5
800
VCE=900V
700
D=50%
RG=3.6 Ω
ZVS
TJ=25°C
600
TJ=125°C
TC=75°C
500
400
300
200
100
0
TJ=125°C
ZCS
TJ=125°C
hard
switching
0
0
0.5
1
1.5
F (V)
2
2.5
3
0
100 200
300
400 500
600
V
I
C (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
Diode
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
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