APTGT400U170D4G [ADPOW]
Single switch Trench + Field Stop IGBT Power Module; 单开关沟道+场站IGBT功率模块
| 型号： | APTGT400U170D4G |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Single switch Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT400U170D4G
Single switch
Trench + Field Stop IGBT®
VCES = 1700V
IC = 400A @ Tc = 80°C
Application
•
•
•
•
Welding converters
1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
3
5
Features
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
2
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
•
•
•
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
2
1
-
-
M6 connectors for power
M4 connectors for signal
4
Benefits
5
•
•
•
•
•
•
Stable temperature behavior
3
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
800
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
400
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
800
±20
2080
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operation Area
800A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT400U170D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
1
mA
Tj = 25°C
2.0
2.4
5.8
2.4
VGE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 16 mA
VGE = 20V, VCE = 0V
5.2
6.4
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
33
nF
f = 1MHz
1.2
250
100
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 900V
850
IC = 400A
120
RG = 3.6Ω
Inductive Switching (125°C)
300
100
1000
VGE = ±15V
ns
VBus = 900V
IC = 400A
Tf
Fall Time
200
RG = 3.6Ω
VGE = ±15V
Tj = 125°C
VBus = 900V
Eon
Turn On Energy
150
mJ
125
IC = 400A
Tj = 125°C
RG = 3.6Ω
Eoff
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
VR=1700V
750
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
1000
IF
DC forward current
Tc=80°C
400
1.8
A
V
IF = 400A
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.2
VF
Diode Forward Voltage
1.9
50
Er
trr
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
mJ
ns
100
420
525
100
170
IF = 400A
VR = 900V
di/dt =4200A/µs
Qrr
µC
2 - 5
APT website – http://www.advancedpower.com
APTGT400U170D4G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.06
0.09
°C/W
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
-40
-40
3
V
150
125
125
5
2
420
°C
Operating Case Temperature
M6
M4
Torque Mounting torque
Wt Package Weight
N.m
g
1
D4 Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGT400U170D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
700
600
500
400
300
200
100
0
VGE=20V
TJ = 125°C
700
600
500
400
300
200
100
0
TJ=25°C
TJ=125°C
VGE=13V
VGE=15V
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
800
500
400
300
200
100
0
VCE = 900V
TJ=25°C
700
600
500
400
300
200
100
0
VGE = 15V
G = 3.6Ω
TJ = 125°C
Eon
R
TJ=125°C
Eoff
TJ=125°C
Er
0
100 200 300 400 500 600 700 800
C (A)
5
6
7
8
9
10
11
I
VGE (V)
Switching Energy Losses vs Gate Resistance
500
Reverse Bias Safe Operating Area
1000
800
600
400
200
0
VCE = 900V
VGE =15V
IC = 400A
400
Eon
TJ = 125°C
300
200
Eoff
VGE=15V
TJ=125°C
RG=3.6Ω
100
Er
0
0
400
800
1200 1600 2000
0
5
10
15
20
25
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGT400U170D4G
Operating Frequency vs Collector Current
Forward Characteristic of diode
25
20
15
10
5
800
VCE=900V
700
600
500
400
300
200
100
0
D=50%
RG=3.6 Ω
ZVS
TJ=25°C
TJ=125°C
TC=75°C
TJ=125°C
ZCS
TJ=125°C
0.5
hard
switching
0
0
100 200 300 400 500 600
0
1
1.5
VF (V)
2
2.5
3
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
Diode
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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