APT10086BVR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
| 型号： | APT10086BVR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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APT10086BVRG
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10086SLC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10086SVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ADPOW
APT10086SVR
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10086SVRG
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10088HVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090BFLL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090BLLG
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090BLL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090SFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT10090SLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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APT100DL60B
Ultrasoft Recovery Rectifi er DiodeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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The Fast IGBT is a new generation of high voltage power IGBTs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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