首页 |元器件品牌

AP9971AGJ [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9971AGJ
型号： AP9971AGJ
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总6页 (文件大小：237K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP9971AGH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
36mΩ  
22A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
G
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9971AGJ)  
are available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
22  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
14  
A
80  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
34.7  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
3.6  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200807022  
AP9971AGH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=15A  
VGS=0V, ID=1mA  
60  
-
-
-
-
-
V
36  
50  
mΩ  
mΩ  
V
GS=6V, ID=10A  
-
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=15A  
VDS=60V, VGS=0V  
VDS=48V ,VGS=0V  
VGS= +20V  
ID=15A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12.4  
-
3
V
gfs  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
-
100  
IGSS  
Qg  
-
+100  
17  
2.5  
6.4  
6.6  
22  
17  
4.3  
27  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=48V  
VGS=10V  
-
VDS=30V  
-
ID=15A  
-
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=2Ω  
-
Fall Time  
-
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
625 1000  
Output Capacitance  
VDS=25V  
90  
65  
-
-
Reverse Transfer Capacitance  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=15A, VGS=0V  
IS=15A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
27  
26  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9971AGH/J  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
T C = 150 o  
C
10 V  
7 .0 V  
T C = 25 o  
C
10 V  
7 .0 V  
5.0 V  
4.5 V  
5.0 V  
4.5 V  
V G = 4.0 V  
V
G = 4 .0V  
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
50  
40  
30  
20  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =10A  
I D =15A  
C =25 o C  
V
G =10V  
T
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
20  
16  
12  
8
T j =150 o C  
T j =25 o C  
4
0
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9971AGH/J  
f=1.0MHz  
1000  
12  
I D = 15 A  
C iss  
10  
V DS = 30 V  
8
6
4
2
0
V DS = 36 V  
V
DS = 48 V  
100  
C oss  
C rss  
10  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
10  
1
Duty factor=0.5  
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
PDM  
t
0.02  
10ms  
T
100ms  
0.01  
T c =25 o C  
DC  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
0.1  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.5  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
F1  
E1  
E2  
e
E1  
5.10  
0.50  
--  
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Part Number  
Package Code  
meet Rohs requirement  
9971AGH  
LOGO  
Date Code (YWWSSS)  
YWWSSS  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-251  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
A
A1  
B1  
B2  
c
2.20  
0.90  
0.50  
0.60  
0.40  
0.40  
6.40  
5.20  
6.70  
5.40  
----  
2.30  
1.20  
0.69  
0.87  
0.50  
0.50  
6.60  
5.35  
7.00  
5.80  
2.30  
6.84  
2.40  
1.50  
0.88  
1.14  
0.60  
0.60  
6.80  
5.50  
7.30  
6.20  
----  
E
E1  
c1  
D
D1  
E
A1  
B2  
B1  
E1  
e
F
F
5.88  
7.80  
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
9971AGJ  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW ：Week  
SSS ：Sequence  
6

相关型号：

AP9971AGJ-HF

 Fast Switching Characteristic
A-POWER

AP9971AGM

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971AGM-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971AGP

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971AGS

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GD

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GH

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GH-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP9971GI

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GI-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GJ

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9971GJ-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明