AP9971GJ [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9971GJ |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9971GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
60V
36mΩ
25A
D
S
▼ Single Drive Requirement
▼ Surface Mount Package
G
Description
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
25
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
16
A
80
A
PD@TC=25℃
Total Power Dissipation
39
W
Linear Derating Factor
0.31
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
3.2
Unit
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
200902243
AP9971GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.05
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=4.5V, ID=12A
V/℃
mΩ
RDS(ON)
-
36
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=60V, VGS=0V
3
Forward Transconductance
17
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=18A
-
+100
18
6
30
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=4.5V
11
9
-
VDS=30V
-
ID=18A
24
26
7
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1.67Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1700 2700
VDS=25V
160
110
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=25A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
IS=18A, VGS=0V,
dI/dt=100A/µs
37
38
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GH/J
100
80
60
40
20
0
70
60
50
40
30
20
10
0
T C =25 o C
T C =150 o C
10V
7.0V
10V
7.0V
5.0V
4.5V
5.0V
4.5V
V
G =3.0V
V G =3.0V
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
35
30
25
2.5
2.0
1.5
1.0
0.5
0.0
I D = 18 A
I
D =18A
T
C =25 o C
V G =10V
Ω
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
16
12
8
2.6
2.2
1.8
1.4
1
T j =25 o C
T j =150 o C
4
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GH/J
f=1.0MHz
14
10000
1000
100
I D =18A
12
V DS =30V
DS =38V
C iss
10
8
V
V
DS =48V
6
C oss
C rss
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10us
100us
1ms
10
0.2
0.1
0.1
10ms
0.05
PDM
1
t
0.02
0.01
100ms
DC
T
Duty factor = t/T
Single Pulse
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.00001
0.1
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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