AP9971GM [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9971GM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9971GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D2
D2
▼ Single Drive Requirement
▼ Surface Mount Package
D1
D1
G2
S2
G1
S1
SO-8
D2
D1
Description
G2
G1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
Units
V
VDS
VGS
60
+25
V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1,2
ID@TA=25℃
ID@TA=100℃
IDM
5
3.2
A
A
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200811042
AP9971GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.06
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
V/℃
mΩ
RDS(ON)
-
50
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=5A
3
Forward Transconductance
16
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (T=70oC) V =48V ,V =0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=60V, VGS=0V
1
-
25
j
DS
GS
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +25V
-
+100
ID=5A
32.5
4.9
8.8
9.6
10
30
5.5
1658
156
109
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
VDS=30V
ID=5A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=6Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
29.2
48
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GM
35
30
25
20
15
10
5
35
30
25
20
15
10
5
T A =25 o C
10V
6.0V
4.5V
T A =150 o C
10V
6.0V
4.5V
V
G =3.0V
V
G =3.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
150
150
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
55
50
45
40
35
30
2.4
I
D =5A
I D =5A
A =25 o C
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
T
Ω
1
2
3
4
5
6
7
8
9
10
11
-50
0
50
100
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.8
2.4
2
10
T j =150 o C
T j =25 o C
1
1.6
1.2
0.8
0.4
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GM
f=1.0MHz
14
10000
1000
100
I D =5A
12
V DS =30V
V DS =38V
V DS =48V
Ciss
10
8
6
Coss
Crss
4
2
10
0
1
5
9
13
17
21
25
29
0
5
10
15
20
25
30
35
40
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
DUTY=0.5
0.2
0.1
10
100us
1ms
0.1
0.05
PDM
1
t
0.02
0.01
10ms
T
Duty factor = t/T
0.01
100ms
Peak Tj = PDM x Rthja + Ta
0.1
Rthja = 135℃/W
T A =25 o C
1s
Single Pulse
Single Pulse
DC
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
1.35
0.10
0.33
0.19
4.80
5.80
3.80
NOM
MAX
A
A1
B
c
1.55
1.75
0.25
0.51
0.25
5.00
6.50
4.00
8
7
6
3
5
4
0.18
0.41
E
E1
0.22
D
E
4.90
1
6.15
2
E1
e
3.90
1.27 TYP
0.254 TYP
－
e
G
L
0.38
0.00
0.90
8.00
B
α
4.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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