AP9971AGJ-HF [A-POWER]
Fast Switching Characteristic;
| 型号： | AP9971AGJ-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Fast Switching Characteristic 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9971AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
36mΩ
22A
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant
G
Description
AP9971A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9971AGJ) are available for low-profile
applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
22
A
Drain Current, VGS @ 10V
Pulsed Drain Current1
14
A
80
A
PD@TC=25℃
TSTG
Total Power Dissipation
34.7
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maixmum Thermal Resistance, Junction-ambient
3.6
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
201501263
AP9971AGH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=15A
VGS=0V, ID=1mA
60
-
-
-
-
-
V
36
50
mΩ
mΩ
V
GS=6V, ID=10A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=15A
VDS=60V, VGS=0V
VGS= +20V, VDS=0V
ID=15A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12.4
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
+100
Qg
17
2.5
6.4
6.6
22
17
4.3
27
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=48V
VGS=10V
-
VDS=30V
-
ID=15A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=10V
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
625 1000
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
90
65
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=15A, VGS=0V
IS=15A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
Reverse Recovery Time
Reverse Recovery Charge
27
26
-
-
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971AGH/J-HF
80
60
40
20
0
50
40
30
20
10
0
T C = 150 o
C
10 V
7 .0 V
T C = 25 o
C
10 V
7 .0 V
5.0 V
4.5 V
5.0 V
4.5 V
V G = 4.0 V
V
G = 4 .0V
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
40
30
20
2.0
1.6
1.2
0.8
0.4
I D =10A
I D =15A
C =25 o C
V
G =10V
T
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
20
16
12
8
T j =150 o C
T j =25 o C
4
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971AGH/J-HF
f=1.0MHz
1000
12
I D = 15 A
C iss
10
V DS = 30 V
8
6
4
2
0
V DS = 36 V
V
DS = 48 V
100
C oss
C rss
10
1
5
9
13
17
21
25
29
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
100us
1ms
0.2
0.1
0.1
0.05
PDM
t
0.02
10ms
T
100ms
0.01
T c =25 o C
DC
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9971AGH/J-HF
MARKING INFORMATION
TO-251
Part Number
meet Rohs requirement
for low voltage MOSFET only
9971AGJ
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
Part Number
meet Rohs requirement
for low voltage MOSFET only
9971AGH
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
相关型号：
©2020 ICPDF网 联系我们和版权申明