AP9971GI-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET型号: | AP9971GI-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总5页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9971GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Performance
▼ Single Drive Requirement
▼ Full Isolation Package
BVDSS
RDS(ON)
ID
60V
36mΩ
23A
D
S
G
▼ RoHS Compliant
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
D
S
ruggedized device design, low on-resistance and cost-effectiveness.
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
23
A
14
A
80
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4.0
65
Rthj-a
Data and specifications subject to change without notice
1
200901163
AP9971GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.05
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=4.5V, ID=12A
V/℃
mΩ
RDS(ON)
-
36
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=60V, VGS=0V
3
Forward Transconductance
17
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=18A
-
+100
18
6
30
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=4.5V
11
9
-
VDS=30V
-
ID=18A
24
26
7
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1.67Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1700 2700
VDS=25V
160
110
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=25A, VGS=0V
IS=18A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
37
38
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GI-HF
100
80
60
40
20
0
70
60
50
40
30
20
10
0
T C =25 o C
T C =150 o C
10V
7.0V
10V
7.0V
5.0V
4.5V
5.0V
4.5V
V
G =3.0V
V G =3.0V
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
35
30
25
2.5
2.0
1.5
1.0
0.5
0.0
I
D =18A
I D = 18 A
V G =10V
T
C =25 o C
Ω
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
16
12
8
2.6
2.2
1.8
1.4
1
T j =25 o C
T j =150 o C
4
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GI-HF
f=1.0MHz
14
10000
1000
100
I D =18A
12
V DS =30V
DS =38V
DS =48V
C iss
10
8
V
V
6
C oss
C rss
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
100us
0.2
0.1
1ms
0.1
0.05
10ms
100ms
1s
PDM
t
0.02
T
DC
0.01
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0.1
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
Millimeters
SYMBOLS
MIN
4.30
2.30
0.50
0.95
0.45
2.30
9.70
12.00
2.91
NOM
4.70
2.65
0.70
1.20
0.65
2.60
MAX
A
A1
b
4.90
3.00
0.90
1.50
0.80
2.90
c2
φ
b1
c
c2
E
10.00 10.40
L
---
15.00
3.91
L4
L3
L4
φ
e
3.41
14.70 15.40 16.10
----
----
3.20
2.54
----
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
c
b
Part Marking Information & Packing : TO-220CFM
LOGO
Part Number
Package Code
9971GI
Meet Rohs requirement
for low voltage MOSFET only
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
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