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AP9971AGP [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9971AGP
型号： AP9971AGP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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AP9971AGS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
36mΩ  
22A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9971AGP)  
are available for low-profile applications.  
G
D
TO-263(S)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
22  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
14  
A
80  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
34.7  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
3.6  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200811212  
AP9971AGS/P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=15A  
VGS=0V, ID=1mA  
60  
-
-
-
-
-
V
36  
50  
mΩ  
mΩ  
V
GS=6V, ID=10A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=15A  
VDS=60V, VGS=0V  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V  
16  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
-
100  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS= +20V  
ID=15A  
-
+100  
17  
2.5  
6.4  
6.6  
22  
17  
4.3  
27  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=48V  
VGS=10V  
VDS=30V  
ID=15A  
-
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=2Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
625 1000  
VDS=25V  
f=1.0MHz  
90  
65  
-
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=15A, VGS=0V  
IS=15A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
27  
26  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9971AGS/P  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
T C = 150 o  
C
10 V  
7 .0 V  
T C = 25 o  
C
10 V  
7 .0 V  
5.0 V  
4.5 V  
5.0 V  
4.5 V  
V G = 4.0 V  
V
G = 4 .0V  
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
50  
40  
30  
20  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =10A  
I D =15A  
T
C =25 o  
C
V
G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
20  
16  
12  
8
T j =150 o  
C
T j =25 o  
C
4
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9971AGS/P  
f=1.0MHz  
1000  
12  
I D = 15 A  
C iss  
10  
V DS = 30 V  
8
6
4
2
0
V DS = 36 V  
V
DS = 48 V  
100  
C oss  
C rss  
10  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
Duty factor=0.5  
100us  
1ms  
0.2  
10  
0.1  
0.1  
0.05  
PDM  
1
t
0.02  
10ms  
100ms  
DC  
T
0.01  
T c =25 o  
C
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
0.1  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-263  
E
E3  
SYMBOLS  
Millimeters  
E1  
E2  
MIN  
4.25  
0.00  
2.20  
0.70  
1.07  
0.30  
1.15  
8.30  
NOM  
4.75  
MAX  
D2  
A
A1  
A2  
b
5.20  
0.30  
2.70  
1.10  
1.47  
0.60  
1.45  
9.40  
0.15  
2.45  
D1  
0.90  
D
b1  
c
1.27  
0.45  
c1  
D
1.30  
8.90  
b1  
b
D1  
D2  
E
5.10(ref)  
1.27(ref)  
10.10  
7.40(ref)  
6.40(ref)  
8.00(ref)  
2.54  
L2  
L3  
9.70  
2.04  
10.50  
3.04  
E1  
E2  
E3  
e
e
L4  
A2  
L1  
L2  
L3  
L4  
θ
2.54(ref)  
1.50  
A
4.50  
0°  
4.90  
5.30  
5°  
1.50  
-----  
c
θ
c1  
1.All Dimensions Are in Millimeters.  
A1  
2.Dimension Does Not Include Mold Protrusions.  
L1  
Part Marking Information & Packing : TO-263  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
9971AGS  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220  
E1  
A
E
Millimeters  
SYMBOLS  
MIN  
4.25  
0.65  
1.15  
0.40  
1.00  
9.70  
---  
NOM  
4.48  
0.80  
1.38  
0.50  
1.20  
MAX  
φ
L1  
L5  
L2  
A
b
4.70  
0.90  
1.60  
0.60  
1.40  
c1  
b1  
c
c1  
E
10.00 10.40  
E1  
e
---  
11.50  
----  
D
L4  
----  
2.54  
L
12.70 13.60 14.50  
L1  
L2  
L3  
L4  
L5  
φ
D
2.60  
1.00  
2.60  
2.80  
1.40  
3.10  
3.00  
1.80  
3.60  
b1  
L3  
14.70 15.50 16.00  
6.30  
3.50  
8.40  
6.50  
3.70  
8.90  
6.70  
3.90  
9.40  
L
c
b
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
e
Part Marking Information & Packing : TO-220  
meet Rohs requirement  
Part Number  
for low voltage MOSFET only  
Package Code  
9971AGP  
LOGO  
YWWSSS  
Date Code (ywwsss)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
6

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