AP9971AGM [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9971AGM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9971AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D2
D2
D1
▼ Single Drive Requirement
▼ Surface Mount Package
D1
G2
S2
G1
S1
SO-8
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
D1
S1
G2
G1
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±25
V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=100℃
IDM
5
3.2
A
A
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
200919071-1/4
AP9971AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=0V, ID=250uA
60
-
-
-
-
-
V
50
60
mΩ
mΩ
VGS=4.5V, ID=2.5A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS= ±25V
ID=5A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.8
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
j
Drain-Source Leakage Current (T=70oC)
j
-
25
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
17.5
2
28
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
6.3
5.5
12
18
4
-
VDS=30V
-
ID=5A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=6Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
650 1040
VDS=25V
85
60
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
27
32
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9971AGM
30
20
10
0
30
20
10
0
T A =150 o C
TA =25 o C
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
4.5V
V
G =4.0V
V G =4.0V
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
60
50
40
30
2.0
1.6
1.2
0.8
0.4
I D =5A
A =25 o C
I D =5A
T
V G =10V
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.4
8
2
T j =150 o C
T j =25 o C
6
1.6
1.2
0.8
4
2
0
-50
0
50
100
150
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9971AGM
f=1.0MHz
14
10000
1000
100
I D =5A
12
V DS =30V
V
DS =36V
10
8
V
DS =48V
Ciss
6
Coss
Crss
4
2
10
0
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
10
100us
0.2
1ms
10ms
100ms
1s
0.1
PDM
1
0.1
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.02
Rthja = 135℃/W
0.1
T A =25 o C
0.01
Single Pulse
DC
Single Pulse
0.01
0.01
0.001
0.1
1
10
100
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN NOM MAX
1.35 1.55 1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
3.80 3.90 4.00
5.80 6.15 6.50
0.38 0.71 1.27
A
A1
B
8
7
6
3
5
4
E
C
E1
D
E1
E
1
2
L
θ
0
4.00 8.00
1.27 TYP
e
e
B
A
A1
DETAIL A
θ
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
相关型号：
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