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AP6679GP-A [A-POWER]

Lower On-resistance, Simple Drive Requirement; 低导通电阻，简单的驱动要求
AP6679GP-A
型号： AP6679GP-A
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Lower On-resistance, Simple Drive Requirement
低导通电阻，简单的驱动要求

晶体 晶体管 功率场效应晶体管 开关 脉冲 驱动 局域网
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AP6679GS/P-A  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
-40V  
13.5mΩ  
-65A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP6679GP) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
-65  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-41  
A
-260  
89  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.71  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
1.4  
62  
Rthj-a  
Data and specifications subject to change without notice  
201107061-1/4  
AP6679GS/P-A  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=-250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
-40  
-
-0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-28A  
VGS=-4.5V, ID=-20A  
-
-
V/℃  
RDS(ON)  
13.5 mΩ  
-
-
20  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-24A  
VDS=-40V, VGS=0V  
VDS=-32V, VGS=0V  
VGS= ±25  
-0.8  
-
-2.5  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-1  
j
Drain-Source Leakage Current (T=150oC)  
-
-25  
j
IGSS  
Qg  
±100  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
ID=-16A  
43  
7
70  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-32V  
VGS=-4.5V  
26  
11  
40  
50  
80  
-
VDS=-20V  
-
ID=-16A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=0.8Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
2870 4590  
VDS=-25V  
960  
740  
2.5  
-
-
f=1.0MHz  
f=1.0MHz  
3.75  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time  
Reverse Recovery Charge  
Test Conditions  
IS=-20A, VGS=0V  
IS=-16A, VGS=0V,  
dI/dt=-100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.2  
V
ns  
nC  
37  
42  
-
-
Qrr  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
2/4  
AP6679GS/P-A  
200  
160  
120  
80  
120  
90  
60  
30  
0
-10V  
-10V  
-7.0V  
T C =25 o C  
T C =150 o  
C
-7.0V  
-5.0V  
-4.5V  
-5.0V  
-4.5V  
V
G = -3.0V  
V
G = -3.0V  
40  
0
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
0
2
4
6
8
10  
12  
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
20  
18  
16  
14  
12  
10  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = -28A  
I D = -20A  
V
G = -10V  
T
C =25 ℃  
Ω
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
50  
40  
30  
20  
10  
0
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
T j =150 o  
C
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP6679GS/P-A  
f=1.0MHz  
14  
12  
10  
10000  
1000  
100  
C iss  
I D = -16A  
DS = -32V  
V
8
6
4
2
0
C oss  
C rss  
0
20  
40  
60  
80  
100  
1
5
9
13  
17  
21  
25  
29  
-V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
1ms  
0.1  
0.05  
10ms  
PDM  
t
0.02  
T
100ms  
1s  
0.01  
Duty factor = t/T  
T C =25 o C  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
1
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
80  
60  
40  
20  
0
V DS = -5V  
VG  
T j =25 o C  
T j =150 o C  
QG  
-4.5V  
QGD  
QGS  
Q
Charge  
0
2
4
6
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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