AP6679GS-A [A-POWER]
TRANSISTOR 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power;
| 型号： | AP6679GS-A |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power 晶体 晶体管 功率场效应晶体管 开关 脉冲 驱动 |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6679BGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low On-resistance
BVDSS
RDS(ON)
ID
-30V
9mΩ
-63A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-252(H)
TO-251(J)
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679BGJ) is
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-63
A
-40
A
-240
A
PD@TC=25℃
TSTG
Total Power Dissipation
54.3
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
2.3
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
201004142
AP6679BGH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-40A
VGS=0V, ID=-250uA
-30
-
-
-
-
V
-
-
9
mΩ
mΩ
VGS=-4.5V, ID=-30A
15
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=-250uA
VDS=-10V, ID=-30A
VDS=-30V, VGS=0V
VGS= +20V, VDS=0V
ID=-30A
-1
-
-
60
-
-3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-10
-
-
+100
Qg
-
44
6.5
28.5
11
67
37
22
70
-
Qgs
Qgd
td(on)
tr
VDS=-24V
-
VGS=-4.5V
-
-
VDS=-15V
-
-
ID=-30A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=1Ω,VGS=-10V
RD=0.5Ω
-
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
3500 5600
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-25V
-
520
495
2
-
-
-
f=1.0MHz
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-30A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
34
30
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679BGH/J-HF
240
200
160
120
80
160
120
80
T C = 150 o
C
-10V
-7.0V
-6.0V
T C = 25 o C
-10V
-7.0 V
-6.0 V
-5.0 V
-5.0V
V
G = - 4.0 V
V
G = - 4.0 V
40
40
0
0
0
4
8
12
16
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I D = -40A
I D = -30 A
V
G = -10V
T
C =25 ℃
12
10
8
Ω
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.6
1.4
1.2
1
T j =150 o
C
T j =25 o C
0.8
0.6
0.4
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679BGH/J-HF
f=1.0MHz
10
5000
4000
3000
2000
1000
0
8
C iss
V DS =-24V
I
D =-30A
6
4
2
0
C oss
C rss
1
5
9
13
17
21
25
29
0
20
40
60
80
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
Operation in this area
0.2
0.1
limited by R
DS(ON)
100us
0.1
0.05
PDM
t
1ms
0.02
T
0.01
10ms
100ms
DC
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(oftf)f
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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