AP6679GS-A-HF_14 [A-POWER]
Simple Drive Requirement;
| 型号： | AP6679GS-A-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6679GS/P-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-40V
13.5mΩ
-65A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP-A)
are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+25
-65
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
-41
A
-260
89
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
0.71
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.4
62
Rthj-a
Data and specifications subject to change without notice
1
201011182
AP6679GS/P-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-40
-
-0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-28A
VGS=-4.5V, ID=-20A
-
-
V/℃
RDS(ON)
13.5 mΩ
-
-
20
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-24A
VDS=-40V, VGS=0V
-0.8
-
-2.5
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=-32V, VGS=0V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-1
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +25V, VDS=0V
ID=-16A
-
+100
43
7
70
-
Qgs
Qgd
td(on)
tr
VDS=-32V
VGS=-4.5V
VDS=-20V
26
11
40
50
80
-
-
ID=-16A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=0.8Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
2870 4590
VDS=-25V
960
740
2.5
-
-
f=1.0MHz
f=1.0MHz
3.75
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-20A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
-1.2
V
ns
nC
37
42
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GS/P-A-HF
120
90
60
30
0
200
160
120
80
-10V
-10V
-7.0V
T C =25 o C
T C =150 o
C
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G = -3.0V
V
G = -3.0V
40
0
0
2
4
6
8
10
12
0.0
2.0
4.0
6.0
8.0
10.0
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = -28A
I D = -20A
V
G = -10V
T
C =25 ℃
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50
40
30
20
10
0
1.5
1.3
1.1
0.9
0.7
0.5
T j =150 o
C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GS/P-A-HF
f=1.0MHz
12
10000
1000
100
10
I D = -16A
V
DS = -32V
C iss
8
6
4
2
0
C oss
C rss
1
5
9
13
17
21
25
29
0
20
40
60
80
100
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
1ms
0.1
0.05
10ms
PDM
t
0.02
T
100ms
1s
0.01
Duty factor = t/T
T C =25 o C
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
V DS = -5V
VG
T j =25 o C
T j =150 o C
60
40
20
0
QG
-4.5V
QGD
QGS
Q
Charge
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
相关型号：
©2020 ICPDF网 联系我们和版权申明