AP6679GS-HF_16 [A-POWER]
Fast Switching Characteristic;
| 型号： | AP6679GS-HF_16 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Fast Switching Characteristic |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6679GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-30V
9mΩ
-75A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP6679 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP6679GP) are available for low-profile
applications.
G
D
TO-263(S)
TO-220(P)
S
G
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
-30
Units
V
VDS
VGS
Gate-Source Voltage
+25
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-75
A
-50
A
-300
A
PD@TC=25℃
TSTG
Total Power Dissipation
89
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
1.4
40
62
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
201501155
AP6679GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=0V, ID=-250uA
-30
-
-
-
-
9
V
-
-
mΩ
mΩ
VGS=-4.5V, ID=-24A
15
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=-250uA
VDS=-10V, ID=-24A
VDS=-30V, VGS=0V
VGS= +25, VDS=0V
ID=-16A
-1
-
-
-3
V
gfs
34
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
-
-1
-
-
+100
Qg
-
42
6
67
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=-24V
-
VGS=-4.5V
-
25
11
35
58
78
-
VDS=-15V
-
-
ID=-16A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=0.94Ω
-
-
-
-
Ciss
Coss
Input Capacitance
VGS=0V
-
2870 4590
Output Capacitance
VDS=-25V
-
960
740
-
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-24A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
47
43
-
-
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GS/P-HF
150
100
50
280
240
200
160
120
80
T C =150 o C
-10V
-8.0V
T C =25 o C
-10V
-8.0V
-6.0V
-4.5V
-6.0V
-4.5V
VG =-3.0V
V
G =-3.0V
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.0
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
13
11
9
1.6
1.4
1.2
1.0
0.8
0.6
I D = -30A
V G = -10V
I D = -24A
T C = 25 ℃
7
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
2.2
1.8
1.4
1
T j =150 o C
T j =25 o C
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GS/P-HF
f=1.0MHz
7
6
5
10000
1000
100
C iss
I D = -16A
V DS = -24V
4
3
2
1
0
C oss
C rss
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100us
1ms
0.2
0.1
100
10
1
0.1
0.05
PDM
t
0.02
T
10ms
100ms
1s
0.01
Duty factor = t/T
T C =25 o
Single Pulse
C
Single Pulse
Peak Tj = PDM x Rthjc + TC
DC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP6679GS/P-HF
MARKING INFORMATION
TO-263
Part Number
meet Rohs requirement
for low voltage MOSFET only
6679GS
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
Part Number
meet Rohs requirement
for low voltage MOSFET only
6679GP
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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