AP6680SGYT-HF [A-POWER]
Simple Drive Requirement, Small Size & Lower Profile; 简单的驱动要求，小尺寸和更低的简介
| 型号： | AP6680SGYT-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement, Small Size & Lower Profile |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6680SGYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
9mΩ
15A
▼ Small Size & Lower Profile
Schottky Diode
▼ RoHS Compliant & Halogen-Free
G
D
D
Description
D
AP6680S series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
15
A
12
A
50
A
PD@TA=25℃
TSTG
Total Power Dissipation
3.13
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
5
Rthj-a
40
Data and specifications subject to change without notice
1
201206211
AP6680SGYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
VGS=0V, ID=250uA
30
-
-
6.7
11.2
1.45
20
-
-
V
mΩ
mΩ
V
9
VGS=4.5V, ID=8A
-
15
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=12A
1
-
3
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
-
100
-
-
+100
Qg
-
10
3
16
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=15V
-
VGS=4.5V
-
5
-
VDS=15V
-
10
6
-
ns
ID=1A
-
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
22
6.5
-
ns
VGS=10V
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
1000 1600
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=15V
-
225
150
1.9
-
-
f=1.0MHz
-
f=1.0MHz
-
3.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V
-
-
-
0.48
18
8
0.5
V
Body Diode+Schottky Reverse Recovery Time IS=12A, VGS=0V,
-
-
ns
nC
Qrr
Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6680SGYT-HF
50
40
30
20
10
0
50
40
30
20
10
0
A =25 o C
T A = 150 o
C
10V
7.0V
6.0V
10V
7.0V
6.0V
T
5.0V
5.0V
V G = 4.0V
V
G = 4.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
14
12
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D =12A
I D = 8 A
V
G =10V
T
A =25 ℃
Ω
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
10
8
2.0
1.6
1.2
0.8
0.4
0.0
I D =10mA
T j =150 o C
T j =25 o C
6
4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6680SGYT-HF
f=1.0MHz
C iss
1200
1000
800
600
400
200
0
10
I D = 12 A
V
DS =15V
8
6
4
2
0
C oss
C rss
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
100us
10
0.1
1ms
0.05
0.02
1
10ms
PDM
100ms
0.01
0.01
t
T
0.1
1s
Duty factor = t/T
T A =25 o C
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthia=210 ℃/W
Single Pulse
DC
0.001
0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
16
12
8
VG
QG
4.5V
QGS
QGD
4
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
相关型号：
AP6901GH-HF
TRANSISTOR 72 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER
AP6902GH-HF
TRANSISTOR 42 A, 30 V, 0.001 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明