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AP6680BGYT-HF [A-POWER]

Simple Drive Requirement, Small Size & Lower Profile; 简单的驱动要求，小尺寸和更低的简介
AP6680BGYT-HF
型号： AP6680BGYT-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Small Size & Lower Profile
简单的驱动要求，小尺寸和更低的简介

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 驱动
文件： 总4页 (文件大小：101K)
中文：  中文翻译
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AP6680BGYT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
16A  
D
S
▼ Small Size & Lower Profile  
▼ RoHS Compliant & Halogen-Free  
G
D
D
Description  
Advanced Power MOSFETs from APEC provide the  
D
D
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The PMPAK® 3x3 package is special for DC-DC converters  
application and lower 1.0mm profile with backside heat sink.  
S
S
S
G
PMPAK® 3x3  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
16  
A
13  
A
50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.57  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
35  
Data and specifications subject to change without notice  
1
201103291  
AP6680BGYT-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=0V, ID=250uA  
30  
-
-
-
-
V
mΩ  
mΩ  
V
9
VGS=4.5V, ID=8A  
-
-
15  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=30V, VGS=0V  
VGS=+20V, VDS=0V  
ID=12A  
1
-
-
3
gfs  
24  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
10  
-
-
+100  
Qg  
-
14  
3.5  
8.5  
9
22.4  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=15V  
-
-
-
-
-
-
-
VGS=4.5V  
-
VDS=15V  
-
ID=1A  
-
6.5  
24  
8
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
VGS=10V  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
1040 1650  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=15V  
-
210  
190  
1.5  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
3
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=2.9A, VGS=0V  
IS=12A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
22  
14  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP6680BGYT-HF  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
A =25 o C  
T A = 150 o  
C
10V  
7.0V  
6.0V  
5.0V  
10V  
7.0V  
6.0V  
5.0V  
T
V G = 4.0V  
V G = 4.0V  
0
1
2
3
4
5
6
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
15  
13  
11  
9
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =12A  
I D = 8 A  
V
G =10V  
T
A =25 ℃  
Ω
7
5
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I D =1mA  
8
6
T j =150 o C  
T j =25 o C  
4
2
0
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP6680BGYT-HF  
f=1.0MHz  
C iss  
1200  
1000  
800  
600  
400  
200  
0
10  
I D = 12 A  
V
DS =15V  
8
6
4
2
0
C oss  
C rss  
0
5
10  
15  
20  
25  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
Duty factor=0.5  
Operation in this area  
limited by R  
DS(ON)  
10  
100us  
0.2  
1ms  
0.1  
0.1  
1
10ms  
100ms  
1s  
0.05  
PDM  
t
T
0.1  
0.02  
0.01  
Duty factor = t/T  
T A =25 o C  
DC  
Peak Tj = PDM x Rthja + Ta  
Rthia=85 ℃/W  
Single Pulse  
Single Pulse  
0.01  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
60  
50  
40  
30  
20  
10  
0
V DS =5V  
VG  
T j =25 o C  
T j =150 o C  
QG  
4.5V  
QGS  
QGD  
Charge  
Q
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4

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