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AP6679GSP-HF [A-POWER]

Lower On-resistance, Simple Drive Requirement; 低导通电阻，简单的驱动要求
AP6679GSP-HF
型号： AP6679GSP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Lower On-resistance, Simple Drive Requirement
低导通电阻，简单的驱动要求

驱动
文件： 总4页 (文件大小：102K)
中文：  中文翻译
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AP6679GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
-30V  
9mΩ  
-75A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP6679GP) are  
available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
-75  
V
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-50  
A
-300  
89  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
1.4  
40  
62  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
200904164  
AP6679GS/P-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A  
VGS=0V, ID=-250uA  
-30  
-
-
-
-
V
-
-
9
mΩ  
mΩ  
VGS=-4.5V, ID=-24A  
15  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-24A  
VDS=-30V, VGS=0V  
VGS= +25, VDS=0V  
ID=-16A  
-1  
-
-
-3  
V
gfs  
34  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
-1  
-
-
+100  
Qg  
-
42  
6
67  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=-24V  
-
VGS=-4.5V  
-
25  
11  
35  
58  
78  
-
VDS=-15V  
-
-
ID=-16A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=0.94Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
-
2870 4590  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=-25V  
-
960  
740  
-
-
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=-24A, VGS=0V  
IS=-16A, VGS=0V,  
dI/dt=-100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.2  
V
ns  
nC  
47  
43  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Package limitation current is -75A .  
4.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP6679GS/P-HF  
150  
100  
50  
280  
240  
200  
160  
120  
80  
T C =150 o  
C
-10V  
-8.0V  
T C =25 o C  
-10V  
-8.0V  
-6.0V  
-4.5V  
-6.0V  
-4.5V  
VG =-3.0V  
V
G =-3.0V  
40  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
15  
13  
11  
9
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = -30A  
I D = -24A  
V
G = -10V  
T
C = 25 ℃  
Ω
7
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
30  
20  
10  
0
2.2  
1.8  
1.4  
1
T j =150 o  
C
T j =25 o C  
0.6  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP6679GS/P-HF  
f=1.0MHz  
7
6
5
10000  
1000  
100  
C iss  
I D = -16A  
V
DS = -24V  
4
3
2
1
0
C oss  
C rss  
0
10  
20  
30  
40  
50  
60  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
-V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor=0.5  
100us  
1ms  
0.2  
0.1  
100  
10  
1
0.1  
0.05  
PDM  
t
0.02  
T
10ms  
100ms  
1s  
0.01  
Duty factor = t/T  
T C =25 o  
Single Pulse  
C
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
DC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
-4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off)tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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