AP6679GR [A-POWER]
Lower On-resistance, Simple Drive Requirement; 低导通电阻,简单的驱动要求型号: | AP6679GR |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Lower On-resistance, Simple Drive Requirement |
文件: | 总5页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP6679GR
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-30V
9mΩ
-75A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+25
V
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-75
A
-51
A
-300
A
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.4
62
Rthj-a
Data and specifications subject to change without notice
1
2008012303
AP6679GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=0V, ID=-250uA
-30
-
-
-
-
V
-
-
9
mΩ
mΩ
VGS=-4.5V, ID=-24A
15
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-16A
VDS=-30V, VGS=0V
-1
-
-
-3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
34
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-1
Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V
-
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +25, VDS=0V
ID=-16A
-
-
+100
-
42
6
67
-
Qgs
Qgd
td(on)
tr
VDS=-24V
-
VGS=-4.5V
VDS=-15V
-
25
11
35
58
78
-
-
-
ID=-16A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=0.94Ω
VGS=0V
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
2870 4590
VDS=-25V
-
960
740
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-24A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
-1.2
V
ns
nC
47
43
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GR
150
100
50
280
240
200
160
120
80
T C =150 o
C
-10V
-8.0V
T C =25 o C
-10V
-8.0V
-6.0V
-4.5V
-6.0V
-4.5V
VG = -3.0V
V
G =-3.0V
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.0
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
13
11
9
1.6
1.4
1.2
1.0
0.8
0.6
I D = -30A
I D = -24A
V
G = -10V
T
C = 25 ℃
Ω
7
-50
0
50
100
150
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
75
60
45
30
15
0
1.8
1.6
1.4
1.2
1
T j =150 o
C
T j =25 o C
0.8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GR
f=1.0MHz
7
6
5
10000
1000
100
C iss
I D = -16A
V
DS = -24V
4
3
2
1
0
C oss
C rss
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
0.2
100us
1ms
100
10
1
0.1
0.1
0.05
PDM
t
T
0.02
0.01
10ms
100ms
1s
DC
Duty factor = t/T
T C =25 o
Single Pulse
C
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
75
60
45
30
15
0
V
DS = -5V
VG
T j =25 o
C
T j =150 o
C
QG
-4.5V
QGD
QGS
Q
Charge
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-262
E
E1
A
Millimeters
E2
SYMBOLS
c1
MIN
4.24
-----
0.66
1.07
0.76
0.30
1.15
8.30
9.90
2.04
NOM
4.44
-----
0.76
1.27
0.86
0.40
1.30
8.60
MAX
A
A1
b
4.64
2.70
0.86
1.47
1.06
0.50
1.45
8.90
D3
D1
L1
D2
D
b1
b3
c
L4
E3
c1
D
b1
b3
L3
E
10.20 10.50
2.54 3.04
A1
e
b
L
10.50 11.00 11.50
L
L1
L3
L4
E1
E2
E3
D1
D2
D3
9.50
----
10.00 10.30
1.30 ----
10.80 11.30 11.35
7.8 (Ref.)
c
6.6 (Ref.)
2.2 (Ref.)
7.8 (Ref.)
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
7.0 (Ref.)
1.7 (Ref.)
Part Marking Information & Packing : TO-262
Part Number
Meet Rohs requirement
for low voltage MOSFET only
Package Code
6679GR
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
相关型号:
AP6679GS-A
TRANSISTOR 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
A-POWER
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