FH101-G [WJCI]
High Dynamic Range FET; 高动态范围FET
| 型号： | FH101-G |
| 厂家： | 
WJ COMMUNICATION. INC. |
| 描述： | High Dynamic Range FET |
| 文件： | 总7页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FH101
High Dynamic Range FET
Product Features
Product Description
Functional Diagram
4
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85qC. The FH101 is available
in the environmentally-friendly lead-free/green/RoHS-
compliant SOT-89 package.
xꢀ 50 – 4000 MHz
xꢀ Low Noise Figure
xꢀ 18 dB Gain
xꢀ +36 dBm OIP3
xꢀ +18 dBm P1dB
1
2
3
xꢀ Single or Dual Supply Operation
xꢀ Lead-free/Green/RoHS-compliant
SOT-89 Package
Function
Gate
Pin No.
1
3
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
Drain
xꢀ MTTF > 100 years
Source
2, 4
Applications
xꢀ Mobile Infrastructure
xꢀ CATV / DBS
xꢀ W-LAN / ISM
xꢀ Defense / Homeland Security
Specifications (1)
Typical Performance (6)
DCElectrical Parameter Units Min Typ Max
Parameter
Frequency
S21
Units
MHz
dB
Typical
1960
Saturated Drain Current, Idss (2)
mA
mS
V
100
140
120
-1.5
170
900
19
2140
16.5
-22
Transconductance, Gm
Pinch-off Voltage, Vp (3)
16.5
-3
S11
dB
-11
-20
S22
dB
-10
-9
-9
Output P1dB
Output IP3 (4)
Noise Figure
Drain Bias
Gate Voltage
dBm
dBm
dB
+18.8
+36
2.7
+18.1
+19.1
+36
3.0
RFParameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3 (4)
Units Min Typ Max
+36
MHz
MHz
dB
50 – 4000
800
18
3.1
5V @ 140mA
0
17
V
dB
23
dBm
dBm
dB
+32
+36
+18
0.77
+5
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
P1dB
Minimum Noise Figure (5)
Drain Bias
V
Gate Bias
V
0
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
25 C with Vds = 5V, Vgs = 0V, in a 50 system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has
=
=
.
OPT
S
L
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
-40 to +85 qC
-55 to +150 qC
+7 V
-6 V
4.5 mA
Ordering Information
Part No.
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
RF Input Power (continuous)
Junction Temperature
4 dB above Input P1dB
+220 qC
FH101-G
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 7 April 2007
FH101
High Dynamic Range FET
Typical Device Data
Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 C for the unmatched device in a 50 ohm system)
S11
S22
Gain and Max. Stable Gain
Swp Max
6GHz
Swp Max
6GHz
24
22
20
18
16
14
12
DB(|S(2,1)|)
DB(GMax())
0
1
2
3
Frequency (GHz)
Swp Min
0.01GHz
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it
is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The
impedance plots are shown from 10 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
Output IP3 vs. Temperature
Output IP3 vs. Output Power
Noise Figure vs. Frequency
45
40
35
30
25
45
40
35
30
25
2.5
2
NF (unmatched device)
Minimum NF
1.5
1
0.5
0
5V 100% Idss
5V 100% Idss
-40
-15
10
35
60
85
0
2
4
6
8
10
12
0.5
1
1.5
2
Output Power per tone (dBm)
Frequency (GHz)
Temperature ( C)
S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)
Freq (MHz)
50
S11 (dB)
0.00
S11 (ang)
-4.08
S21 (dB)
19.36
19.19
18.85
18.47
17.95
17.47
16.82
16.21
15.65
15.05
14.42
13.74
13.18
S21 (ang)
176.06
164.65
150.19
136.21
123.24
110.92
99.18
S12 (dB)
-51.05
-37.15
-31.34
-28.24
-26.22
-24.88
-23.95
-23.27
-22.81
-22.39
-22.25
-22.08
-22.01
S12 (ang)
87.96
78.37
66.75
55.74
45.25
35.22
26.69
18.17
9.87
S22 (dB)
S22 (ang)
-3.34
-4.38
-4.52
-4.77
-5.19
-5.77
-6.44
-7.14
-7.94
-8.84
-9.57
-10.43
-11.43
-12.30
250
-0.13
-0.34
-0.55
-0.83
-1.16
-1.50
-1.80
-2.03
-2.25
-2.37
-2.55
-2.62
-19.64
-11.51
-22.43
-33.05
-43.46
-53.09
-61.08
-69.92
-78.43
-86.41
-93.92
-101.88
-108.95
500
-39.41
750
-58.33
1000
1250
1500
1750
2000
2250
2500
2750
3000
-75.93
-93.29
-110.36
-125.64
-140.92
-155.64
-169.80
177.26
165.93
88.19
77.53
67.15
2.11
57.62
-4.68
48.11
-11.35
-17.16
39.86
Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)
Freq (MHz)
700
NF,min (dB)
0.51
MagOpt (mag)
0.574
AngOpt (deg)
32.8
Rn
0.403
0.409
0.379
0.365
0.357
0.345
0.335
0.323
800
0.77
0.535
37.4
900
0.66
0.508
44.1
1000
1100
1200
1300
1400
0.74
0.488
50.4
0.85
0.463
56.4
0.85
0.458
62.0
0.95
0.446
67.3
1.07
0.450
73.3
Device S-parameters and noise are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 2 of 7 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
FH101
High Dynamic Range FET
Reference Design: 35 MHz, 17 dB Gain
Gain / Return Loss
Frequency
Gain
MHz
dB
30
35
40
18
17
16
15
14
13
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
16.6 16.8 16.8
-5
S11
dB
-19
-21
-20
-16
+18
+34
3.4
-13
-14
S22
dB
-10
-15
-20
-25
P1dB
dBm
dBm
dB
OIP3
Noise Figure
Supply Voltage
Supply Current
4.0
3.2
V
+5
mA
140
25
30
35
40
45
Frequency (MHz)
ID=C3
C=1000 pF
ID=C6
C=1000 pF
+5V
ID=R6
R=390 Ohm
ID=R7
R=390 Ohm
ID=L1
L=470 nH
FH101
2
ID=R1
C=68 pF
ID=C1
R=3.9 Ohm
1
ID=C2
C=1000 pF
ID=R8
L=390 nH
Notes:
1.
r
2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 170 MHz, 14 dB Gain
Gain / Return Loss (dB)
Frequency
Gain
MHz 160
170
180
15
14
13
12
11
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
dB
dB
14.1 14.2 14.3
S11
-25
-21
-33
-23
-28
-26
-10
-20
-30
-40
S22
dB
P1dB
dBm
dBm
dB
+18.6
+36
2.7
OIP3
Noise Figure
Supply Voltage
Supply Current
2.7
2.7
V
+5
mA
140
0.12
0.14
0.16
0.18
0.2
0.22
Frequency (GHz)
ID=C3
C=1000 pF
+5V
ID=R6
R=240 Ohm
ID=C6
C=1000 pF
ID=R7
R=240 Ohm
FH101
ID=L1
L=220 nH
2
ID=R1
C=24 pF
1
ID=R2
R=4 Ohm
ID=C2
C=1000 pF
ID=R8
L=82 nH
Notes:
1.
2.
Circuit Board Material: .014” Getek ML200DSS
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
r
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 3 of 7 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
FH101
High Dynamic Range FET
Reference Design: 260 MHz, 25 dB Gain
Gain / Return Loss
Frequency
Gain
MHz 250
260
270
26
25
24
23
22
21
0
dB
dB
25.2 25.1 24.9
-5
S11
-23
-12
-22
-14
-13
-17
S22
dB
-10
-15
-20
-25
P1dB
dBm
dBm
dB
+19.4
+34.5
1.9
OIP3
Noise Figure
Supply Voltage
Supply Current
1.8
2.1
V
+5
DB(|S(2,1)|) (L)
0.22
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
0.28 0.3
mA
140
0.2
0.24
0.26
Frequency (GHz)
ID=C3
C=1.8e4 pF
+5V
ID=C6
C=1000 pF
ID=R7
R=2000 Ohm
ID=R6
R=2000 Ohm
FH101
ID=L1
L=220 nH
2
ID=R1
L=120 nH
ID=C1
C=1000 pF
1
ID=C2
C=1000 pF
ID=C5
R=1e4 Ohm
C=0.2 pF
R=3.3 Ohm
Notes:
1.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
r
2.
Reference Design: 460 MHz, 20 dB Gain
Gain / Return Loss
Frequency
Gain
MHz 450
460
470
21
20
19
18
17
16
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
dB
dB
19.9 19.9 19.9
-5
S11
-24
-16
-24
-15
-21
-15
S22
dB
-10
-15
-20
-25
P1dB
dBm
dBm
dB
+18.6
+36
OIP3
Noise Figure
Supply Voltage
Supply Current
1.95 2.08 2.17
V
+5
mA
140
0.34
0.38
0.42
0.46
0.5
0.54
0.58
Frequency (GHz)
ID=R7
R=750 Ohm
ID=C3
C=1000 pF
ID=R6
ID=C6
R=750 Ohm C=1000 pF
+5V
FH101
ID=L1
L=100 nH
ID=R1
L=36 nH
2
ID=C1
C=1000 pF
1
ID=R2
L=10 nH
ID=C2
C=1000 pF
ID=C5
R=5000 Ohm
Notes:
1.
2.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
r
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 4 of 7 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
FH101
High Dynamic Range FET
Reference Design: 790 MHz, 19 dB Gain
Gain / Return Loss
Frequency
Gain
GHz
dB
746
19.2
-20
790
19.4
-28
-23
+19
+36
2.3
835
19.3
-15
20
19.5
19
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
-5
S11
dB
-10
-15
-20
-25
-30
S22
dB
-22
-22
P1dB
dBm
dBm
dB
18.5
18
OIP3
Noise Figure
Supply Voltage
Supply Current
17.5
17
V
+5
mA
140
0.7
0.75
0.8
0.85
0.9
Frequency (GHz)
+5V
ID=C4
C=1e4 pF
ID=C6
C=100 pF
ID=C3
C=100 pF
ID=R7
R=560 Ohm
ID=R6
R=560 Ohm
FH101
ID=L1
L=27 nH
ID=C1
C=100 pF
2
1
ID=R2
L=2.2 nH
ID=R1
L=8.2 nH
ID=C2
C=100 pF
ID=C5
L=10 nH
Notes:
1.
2.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 790 MHz, 17 dB Gain
Noise Figure vs. Frequency
Gain / Return Loss
Frequency
Gain
GHz 746
790
835
19
18
17
16
15
14
0
4
3
2
1
0
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
dB
dB
17.3 17.4 17.4
25 °C
50 °C
90 °C
-5
S11
-19
-22
-19
-22
+19
+36
2.1
-16
-21
S22
dB
-10
-15
-20
-25
P1dB
dBm
dBm
dB
OIP3
Noise Figure
Voltage
Current
2.0
2.2
V
+5
740
760
780
800
820
840
mA
140
0.7
0.75
0.8
0.85
0.9
Frequency (MHz)
Frequency (GHz)
+5V
ID=C4
C=10000 pF
ID=C6 ID=R7
C=100 pF R=360 Ohm
ID=C3
C=100 pF
ID=R6
R=360 Ohm
FH101
ID=L1
L=33 nH
2
ID=R1
L=12 nH
ID=C2
C=100 pF
ID=C1
C=100 pF
1
ID=C5
R=10000 Ohm
Notes:
1.
2.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 5 of 7 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
FH101
High Dynamic Range FET
Reference Design: 880 MHz, 18 dB Gain
Gain / Return Loss (dB)
Frequency
Gain
GHz
dB
850
17.95
-16
875
17.96
-15
900
18.00
-15
19
18
17
16
15
14
0
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
-5
S11
dB
S22
dB
-23
-22
-22
-10
-15
-20
-25
P1dB
dBm
dBm
dB
+19
+36
1.83
+5
OIP3
Noise Figure
Supply Voltage
Supply Current
1.8
1.85
V
mA
140
0.7
0.8
0.9
1
Frequency (GHz)
+5V
ID=C4
C=1e4 pF
ID=C6 ID=R7
C=100 pF R=360 Ohm
ID=C3
C=100 pF
ID=R6
R=360 Ohm
FH101
ID=L1
L=33 nH
2
ID=R1
L=10 nH
ID=C2
C=100 pF
ID=C1
C=100 pF
1
ID=C5
R=1e4 Ohm
Notes:
1.
2.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 800 - 2200 MHz, 15 dB Gain
Gain / Return Loss
Frequency
Gain
GHz
dB
900
14.9
-22
1900
16.3
-10
2140
16.4
-18
18
16
14
12
10
8
20
10
0
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
S11
dB
S22
dB
-14
-9.7
+19.4
+37.0
2.6
-9.6
P1dB
dBm
dBm
dB
+19.1
+35.7
2.4
+19.1
+36.0
2.8
-10
-20
-30
OIP3
Noise Figure
Supply Voltage
Supply Current
V
+5
mA
140
0.75
1
1.25
1.5
1.75
2
2.25
Frequency (GHz)
+5V
ID=C4
C=100 pF
ID=C6
C=100 pF
ID=R7
R=240 Ohm
ID=R6
R=240 Ohm
ID=C3
C=100 pF
TLINP
ID=TL1
Z0=50 Ohm
L=80 mil
Eeff=3.4
Loss=0
F0=0 GHz
FH101
ID=L1
L=18 nH
ID=R1
L=2.7 nH
2
ID=C1
R=2.2 Ohm
1
ID=C2
C=100 pF
ID=C5
L=6.8 nH
C=2 pF
Notes:
1.
2.
3.
Circuit Board Material: .0
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
A dc blocking capacitor needs to be placed before C1 if dc is present at the input of the circuit.
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
Web site: www.wj.com Page 6 of 7 April 2007
FH101
High Dynamic Range FET
FH101-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes.
Outline Drawing
Product Marking
The FH101-G will be marked with an “FH1G”
An alphanumeric lot code
designator.
(“XXXX-X”) is also marked below the part
designator on the top surface of the package. A
“1” will be lasermarked in the upper right-hand
corner.
The obsolete tin-lead package is
marked with an “FH1” designator followed by
an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
Land Pattern
MSL / ESD Rating
ESD Rating: Class 1B
Value:
Test:
Standard:
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Test:
Standard:
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
MTTF vs. GND Tab Temperature
Thermal Specifications
1000
100
10
Parameter
Rating
-40 to +85qC
59 qC / W
126 qC
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tj (2)
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
1
+5V, 140 mA at an 85 C case temperature.
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160 C.
A
7. All dimensions are in millimeters (inches). Angles are in degrees.
60
70
80
90
100
110
Tab Temperature (°C)
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 7 of 7 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
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SANYO
FH105A
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
SANYO
FH10A-06S-1SHB
Card Edge Connector, 6 Contact(s), 1 Row(s), Male, Right Angle, Surface Mount Terminal,
HRS
FH10A-07S-1SH
Card Edge Connector, 7 Contact(s), 1 Row(s), Male, Right Angle, Surface Mount Terminal,
HRS
FH10A-07S-1SHB
Card Edge Connector, 7 Contact(s), 1 Row(s), Male, Right Angle, Surface Mount Terminal,
HRS
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