FH105 [SANYO]
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications; 高频低噪声放大器，差分放大器的应用
| 型号： | FH105 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN6219
NPN Epitaxial Planar Silicon Composite Transistor
FH105
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
Package Dimensions
unit:mm
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
2160
[FH105]
· The FH105 is formed with two chips, being equiva-
lent to the 2SC5245, placed in one package.
· Excellent in thermal equilibrium and pair capability.
0.25
0.15
6
1
5
4
3
Electrical Connection
0 to 0.1
B1
E1
E2
2
0.65
2.0
1 : Collector1
2 : Base2
Tr1
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
Tr2
C1
B2
C2
SANYO : MCP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
20
10
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
1.5
30
V
EBO
I
mA
mW
mW
˚C
C
Mounted on a ceramic board (250mm2×0.8mm) 1unit
Mounted on a ceramic board (250mm2×0.8mm)
150
300
150
Collector Dissipation
Total Dissipation
P
C
P
T
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
I
V
V
V
=10V, I =0
E
µA
µA
CBO
CB
EB
CE
Emitter Cutoff Current
DC Current Gain
I
=1V, I =0
10
EBO
C
h
=5V, I =10mA
C
90
200
FE
h
FE
DC Current Gain Ratio
V
V
=5V, I =10mA
C
0.7
0.95
1.0
CE
CB
(small/large)
V
BE
Base-to-Emitter Voltage Difference
=5V, I =10mA
C
mV
(large-small)
Continued on next page.
Note) The specifications shown above are for each individual transistor.
Marking : 105
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1702 No.6219–1/5
FH105
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
f
V
V
V
V
=5V, I =10mA
C
=10V, f=1MHz
8
8
11
GHz
pF
T
CE
CB
CE
CE
Cob
| S21e |2
NF
0.45
10
0.7
=5V, I =10mA, f=1.5GHz
C
dB
=5V, I =5mA, f=1.5GHz
1.4
3.0
dB
C
Note) The specifications shown above are for each individual transistor.
Marking : 105
h
FE
-- I
f
-- I
T C
C
5
3
2
V
=5V
CE
3
2
10
100
7
5
7
5
3
2
3
2
1.0
10
7
7
5
0.1
5
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
1.0
10
100
Collector Current, I – mA
C
Collector Current, I – mA
C
IT00322
IT00323
Cob -- V
Cre -- V
CB
CB
5
5
f=1MHz
f=1MHz
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
10
-- V
0.1
Collector-to1-.B0ase Voltage, V 10-- V
Collector-to-Base Voltage, V
IT00325
IT00324
CB
CB
NF -- I
NF -- I
C
C
12
12
f=1.5GHz
V
=2V
CE
f=1GHz
10
8
10
8
6
6
4
4
2
0
2
0
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
10
2
3
5
Collect1o.r0Current, I – mA
Collec1to.0r Current, I – mA
0.1
10
0.1
IT00327
C
IT00326
C
No.6219–2/5
FH105
2
2
S21e
-- I
S21e
-- I
C
C
16
16
f=1GHz
f=1.5GHz
14
12
14
12
10
8
10
8
6
6
4
2
0
4
2
0
5
7
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
3
1.0
10
100
100
IT00328
1.0Collector Current, I 10 – mA
Collector Current, I – mA
C
C
IT00329
P
-- Ta
C
350
Mounted on a ceramic board (250mm2×0.8mm)
300
250
T
otal dissipation
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
IT00330
S parameter
S11e
S21e
f=200MHz to 2000MHz(200MHz Step)
f=200MHz to 2000MHz(200MHz Step)
°
90
j50
°
60
°
120
j25
j100
V
=5V
CE
I =10mA
C
j150
j200
j250
°
V
°
150
0.2GHz
30
=5V
j10
CE
I =5mA
C
0.2GHz
V
=2V
CE
I =3mA
0.2GHz
=1V
25
100
150
250
12
10
C
4
8
20
16
50
V
°
CE
±180
0
0
V
=5V
CE
I =10mA
0.2GHz
I =1mA
C
C
V
=5V
CE
I =5mA
0.2GHz 0.2GHz
0.2GHz
C
--j250
--j200
--j10
0.2GHz
°
°
--30
--150
--j150
--j100
V
=1V
CE
I =1mA
V
=2V
CE
I =3mA
C
--j25
C
°
°
--60
--120
--j50
°
--90
IT00331
IT00332
No.6219–3/5
FH105
S22e
S12e
f=200MHz to 2000MHz(200MHz Step)
f=200MHz to 2000MHz(200MHz Step)
°
90
j50
°
60
°
120
j25
j100
V
=5V
CE
I =5mA
C
j150
j200
V
=5V
CE
°
150
I =10mA
C
°
30
j10
j250
V
CE
=2V
=1V
V
CE
I =3mA
0.2GHz
0.2GHz
0.2GHz
I =1mA
C
C
0.2GHz
150
100
250
0.2GHz
0.04 0.08 0.12 0.16 0.2
10
25
50
°
V
=5V
±180
0
CE
I =10mA
0
C
0.2GHz
0.2GHz
0.2GHz
--j250
--j200
=1V
--j150
--j10
°
--30
°
--150
V
V
=5V
CE
I =1mA
CE
I =5mA
C
C
V
=2V
--j100
CE
--j25
I =3mA
C
°
°
--60
--120
--j50
°
IT00333
IT00334
--90
S Parameters (Common emitter)
V
=5V, I =5mA, Z =50Ω
CE
C
O
S
S
S
S
Freq (MHz)
200
| S
|
| S
|
| S
|
| S
|
22
11
21
12
22
11
21
12
0.763
0.590
0.456
0.374
0.323
0.288
0.264
0.248
0.239
0.235
–37.5
–65.4
11.926
9.202
7.173
5.743
4.785
4.105
3.599
3.213
2.905
2.651
146.9
124.3
109.4
98.7
90.5
83.6
77.5
71.3
66.4
61.3
0.036
0.058
0.073
0.086
0.098
0.110
0.123
0.136
0.150
0.165
70.7
60.9
57.4
56.7
56.7
57.2
57.7
57.6
57.6
57.2
0.892
0.740
0.631
0.566
0.528
0.505
0.488
0.476
0.466
0.462
–19.1
–29.1
–33.7
–35.8
–37.2
–38.4
–39.6
–41.2
–43.3
–45.4
400
600
–85.5
800
–102.0
–115.0
–127.5
–137.7
–147.4
–156.9
–165.7
1000
1200
1400
1600
1800
2000
V
=5V, I =10mA, Z =50Ω
C O
CE
S
S
S
S
Freq (MHz)
200
| S
11
|
| S
|
| S
|
| S
|
22
11
21
12
22
21
12
0.605
0.417
0.319
0.266
0.238
0.225
0.215
0.213
0.212
0.216
–52.6
–84.6
16.354
11.011
8.026
6.250
5.115
4.336
3.813
3.365
3.030
2.754
136.2
113.3
100.5
91.3
84.7
78.8
73.4
68.1
63.5
58.9
0.031
0.048
0.062
0.076
0.090
0.104
0.119
0.135
0.150
0.166
67.5
62.4
62.2
63.4
64.3
64.4
64.5
63.8
63.1
62.5
0.804
0.622
0.533
0.491
0.469
0.458
0.449
0.443
0.436
0.438
–23.9
–30.5
–32.0
–32.4
–33.2
–34.6
–35.8
–37.7
–39.6
–41.9
400
600
–106.3
–124.6
–136.5
–148.9
–158.3
–167.3
–175.6
–177.5
800
1000
1200
1400
1600
1800
2000
No.6219–4/5
FH105
V
=2V, I =3mA, Z =50Ω
CE
C
O
S
S
S
S
22
Freq (MHz)
200
| S
|
| S
|
| S
|
| S
|
22
11
21
12
11
21
12
0.842
0.704
0.579
0.480
0.417
0.376
0.343
0.319
0.303
0.298
–30.7
–56.3
8.491
7.161
5.879
4.882
4.154
3.597
3.212
2.875
2.604
2.383
153.0
131.9
116.3
104.2
95.0
0.044
0.075
0.095
0.109
0.121
0.132
0.143
0.154
0.166
0.179
72.5
60.9
54.1
51.0
49.3
48.7
48.6
48.7
48.6
48.9
0.931
0.808
0.696
0.615
0.564
0.526
0.496
0.475
0.461
0.451
–17.1
–28.8
–36.2
–40.6
–43.5
–45.8
–47.5
–49.6
–51.6
–52.9
400
600
–76.1
800
–93.1
1000
1200
1400
1600
1800
2000
–106.3
–119.6
–130.2
–140.5
–150.0
–160.0
87.1
80.2
73.4
67.7
62.1
V
=1V, I =1mA, Z =50Ω
CE
C
O
S
S
S
S
Freq (MHz)
200
| S
|
| S
|
| S
|
| S
|
22
11
21
12
22
11
21
12
0.945
0.884
0.810
0.728
0.667
0.605
0.561
0.518
0.492
0.465
–18.9
–37.3
3.296
3.206
2.942
2.711
2.449
2.252
2.061
1.909
1.766
1.658
162.5
145.9
131.2
117.8
107.0
96.9
0.054
0.102
0.139
0.166
0.187
0.199
0.207
0.212
0.215
0.217
77.2
65.9
56.3
48.6
42.5
37.3
33.5
30.6
28.6
27.6
0.980
0.934
0.870
0.811
0.763
0.715
0.673
0.638
0.611
0.592
–11.0
–20.5
–29.0
–35.5
–40.9
–45.7
–49.4
–53.4
–56.5
–59.9
400
600
–53.6
800
–69.4
1000
1200
1400
1600
1800
2000
–82.5
–95.8
–106.1
–117.2
–127.5
–137.9
88.1
79.5
72.2
65.2
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.
PS No.6219–5/5
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NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
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