FH102 [SANYO]
High-Frequency Low-Noise Amp, Differential Amp Applications; 高频低噪声放大器，差分放大器应用
| 型号： | FH102 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Low-Noise Amp, Differential Amp Applications |
| 文件： | 总5页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp,
Differential Amp Applications
Features
Package Dimensions
• Composite type with 2 transistors contained in the MCP
unit: mm
package currently in use, improving the mounting
2149-MCP6
efficiency greatly.
• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
[FH102]
0.25
0.15
• Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.
6
5
2
4
0 ‘0.1
1
3
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
0.65
2.0
6 : Base1
Specifications
SANYO : MCP6
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
10
2
CBO
CEO
EBO
V
V
I
70
300
mA
mW
C
Collector Dissipation
P
Mounted on ceramic board
(250mm2×0.8mm), 1unit
Mounted on ceramic board
(250mm2×0.8mm)
C
T
Total Dissipation
P
500
mW
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
–55 to +150
Ratings
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Unit
min
typ
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
=10V, I =0
µA
µA
CBO
EBO
CB
EB
CE
CE
E
=1V, I =0
10
C
h
h
=5V, I =20mA
90
200
FE
C
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
=5V, I =20mA
0.7
0.95
1.0
FE(small/large)
C
V
V
=5V, I =20mA
mV
BE(small-large) CE
C
Gain-Bandwidth Product
Output Capacitance
f
V
CE
V
CB
V
CB
=5V, I =20mA
C
=10V, f=1MHz
5
7
0.75
0.5
GHz
pF
T
Cob
1.2
Reverse Transfer Capacitance Cre
=10V, f=1MHz
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
FH102
Continued from preceding page.
Parameter
Ratings
typ
Symbol
Conditions
=5V, I =20mA, f=1GHz
Unit
min
9
max
1.8
2
Forward Transfer Gain
S2le (1)
V
V
V
12
dB
dB
dB
CE
CE
CE
C
2
S2le (2)
NF
=5V, I =3mA, f=1GHz
8
C
Noise Figure
=5V, I =7mA, f=1GHz
1.0
C
Note) The specifications shown above are for each individual transistor except the h (small/large) and V
FE
BE
(small-large) for which pair capability is also shown.
Marking : 102
Electrical Connection
B 1
B 2
E 2
C 1
E 1
C 2
f
– I
h
FE
– I
C
C
T
3
2
2
V
CE
=5V
V
CE
=5V
10
7
100
7
5
5
3
2
3
2
1.0
7
10
7
5
5
3
5
7
2
3
5
7
2
3
5
7
100
2
7
2
3
5
7
2
3
5
7
2
1.0
10
1.0
10
100
Collector Current,I
–
mA
Collector Current,I
– mA
C
C
Cob – V
Cre – V
CB
CB
3
2
3
2
f=1MHz
f=1MHz
1.0
1.0
7
7
5
5
3
2
3
2
0.1
0.1
7
7
5
5
7
2
3
5
7
2
3
5
7
10
2
3
7
2
3
5
7
2
3
5
7
2
3
0.1
1.0
0.1
1.0
10
Collector-to-Base Voltage, V
–
V
Collector-to-Base Voltage, V
–
V
CB
CB
No.5874-2/5
FH102
2
S21e
– I
C
NF – I
C
12
10
8
14
12
10
8
V
=5V
CE
f=1GHz
f=1GHz
6
6
4
4
2
0
2
0
3
5
7
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
100
1.0
10
100
Collector Current,I
–
mA
Collector Current,I
–
mA
C
C
P
– Ta
D
600
500
400
300
200
100
0
Mounted on ceramic board (250mm2×0.8mm)
100
20 40 60 80 120
0
140
160
Ambient Temperature, Ta
– °C
No.5874-3/5
FH102
S Parameters
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
90°
j50
0.1GHz
60°
120°
VCE =5V
IC=20mA
j100
j25
VCE =5V
IC=7mA
j150
j200
j250
150°
30°
VCE =2V
j10
0.1GHz
IC=3mA
0.1GHz
2.0GHz
2.0GHz
2.0GHz
10
25
50
100 150 250 500
2.0GHz
16
4
8
12
20
0
0
±180°
VCE =2V
IC=3mA
VCE=5V
IC=20mA
VCE =5V
IC=7mA
0.1GHz
–j250
0.1GHz
–j10
0.1GHz
–j200
–30°
–150°
–j150
–j25
–j100
–60°
–120°
–j50
–90°
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
90°
2.0GHz
j50
120°
60°
j100
j25
VCE =5V
IC=20mA
2.0GHz
j150
j200
j250
2.0GHz
150°
30°
VCE =2V
IC=3mA
j10
VCE=5V
IC=7mA
0.1GHz
10
25
50
100 150 250 500
0.2
0.04
0.08
0.12
0.16
±180°
0
0
VCE =5V
IC=20mA
0.1GHz
2.0GHz
VCE =5V
IC=7mA
–j250
–j200
–j10
–30°
–150°
VCE=2V
IC=3mA
–j150
2.0GHz
–j25
–j100
2.0GHz
–60°
–120°
–j50
–90°
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
No.5874-4/5
FH102
S Parameters (Common emitter)
=5V, I =7mA, Z =50Ω
V
CE
C
O
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
Freq(MHz)
100
0.720
0.612
0.497
0.456
0.440
0.436
0.434
0.433
0.433
0.434
0.439
– 46.0
– 80.9
– 121.3
– 143.5
– 157.6
– 167.5
– 176.1
176.6
17.973
13.927
8.656
6.080
4.725
3.864
3.258
2.847
2.329
2.252
2.057
148.5
127.3
105.0
92.8
84.3
77.0
70.3
64.5
57.4
54.2
49.2
0.030
0.047
0.066
0.079
0.094
0.110
0.126
0.143
0.160
0.178
0.197
68.5
57.1
51.3
52.9
55.4
56.8
57.9
58.4
58.9
58.6
58.1
0.880
0.697
0.479
0.382
0.339
0.323
0.312
0.304
0.296
0.293
0.294
– 23.6
– 37.6
– 47.6
– 50.5
– 51.8
– 53.4
– 55.8
– 58.3
– 62.0
– 65.0
– 68.1
200
400
600
800
1000
1200
1400
1600
1800
2000
170.9
165.0
159.6
V
CE
=5V, I =20mA, Z =50Ω
C O
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
Freq(MHz)
100
0.481
0.420
0.391
0.386
0.381
0.382
0.385
0.388
0.390
0.391
0.394
– 78.8
– 119.2
– 151.6
– 166.4
– 175.9
178.2
29.795
19.008
10.416
7.084
5.407
4.401
3.701
3.217
2.839
2.534
2.319
132.9
112.2
95.4
86.6
80.1
74.1
68.5
63.6
58.8
54.3
50.1
0.022
0.033
0.052
0.071
0.092
0.114
0.134
0.156
0.176
0.197
0.219
63.9
60.8
64.7
67.2
68.4
67.8
66.8
65.6
64.0
62.4
60.6
0.707
0.470
0.296
0.236
0.213
0.208
0.204
0.202
0.199
0.197
0.197
– 38.2
– 51.1
– 55.3
– 56.1
– 56.6
– 57.9
– 60.7
– 63.5
– 67.9
– 71.2
– 74.2
200
400
600
800
1000
1200
1400
1600
1800
2000
172.1
166.7
162.1
156.7
152.1
V
CE
=2V, I =3mA, Z =50Ω
C O
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
Freq(MHz)
100
0.858
0.782
0.653
0.588
0.557
0.543
0.536
0.533
0.527
0.525
0.528
– 32.4
– 60.7
9.413
8.187
5.855
4.337
3.444
2.871
2.446
2.145
1.904
1.714
1.564
157.2
138.5
113.8
98.4
87.7
78.5
70.5
63.5
57.1
51.7
45.9
0.040
0.070
0.101
0.114
0.122
0.130
0.137
0.146
0.155
0.168
0.183
72.6
59.2
44.5
39.1
38.0
38.6
40.3
42.5
45.0
47.3
49.2
0.945
0.833
0.637
0.515
0.454
0.426
0.407
0.393
0.382
0.379
0.378
– 16.5
– 29.3
– 43.2
– 50.0
– 53.8
– 57.1
– 60.3
– 63.8
– 68.0
– 72.0
– 75.8
200
400
– 101.1
– 126.5
– 143.7
– 156.3
– 166.8
– 175.5
177.0
600
800
1000
1200
1400
1600
1800
2000
170.3
163.8
No.5874-5/5
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