FH102A [SANYO]
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications; NPN外延平面硅复合晶体管高频低噪声放大器，差分放大器的应用
| 型号： | FH102A |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1125
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
FH102A
Features
•
Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
greatly.
•
•
The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package.
Optimal for differential amplification due to excellent thermal equilibrium and pair capability.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
20
10
V
2
V
I
C
70
mA
mW
mW
°C
°C
Collector Dissipation
Total Dissipation
P
When mounted on ceramic substrate (250mm2✕0.8mm) 1unit
When mounted on ceramic substrate (250mm2✕0.8mm)
300
500
150
C
P
T
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
10
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
E
I
=1V, I =0A
C
EBO
h
=5V, I =20mA
90
200
FE
C
Marking : 102
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60408AB TI IM TC-00001436
No. A1125-1/6
FH102A
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=5V, I =20mA
Unit
min
max
DC Current Gain Ratio
h
(small/large)
(largel-smal)
V
CE
V
CE
V
CE
V
CB
V
CB
V
CE
V
CE
V
CE
0.7
5
0.95
FE
C
Base-to-Emitter Voltage Diffrence
Gain-Bandwidth Product
Output Capacitance
V
=5V, I =20mA
1.0
7
mV
GHz
pF
BE
C
f
T
=5V, I =20mA
C
Cob
=10V, f=1MHz
=10V, f=1MHz
0.75
0.5
12
1.2
Reverse Transfer Capacitance
Cre
pF
S21e 21
=5V, I =20mA, f=1GHz
C
9
dB
⏐
⏐
⏐
Forward Transfer Gain
Noise Figure
S21e 22
=2V, I =3mA, f=1GHz
C
8
dB
⏐
NF
=5V, I =7mA, f=1GHz
1.0
1.8
dB
C
Note) The specifications shown above are for each individual transistor except the h (small/large) and V
FE
(large-small) for which pair capability is
BE
also shown.
Package Dimensions
unit : mm (typ)
Electrical Connection
7026-002
B1
B2
E2
0.25
0.15
6
5
4
3
0.05
C1
E1
C2
1
2
0.65
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
2.0
6 : Base1
SANYO : MCP6
h
FE
-- I
f
-- I
C
T
C
2
3
2
V
=5V
V
=5V
CE
CE
10
100
7
5
7
5
3
2
3
2
1.0
10
7
5
7
5
3
5
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
ITR10754
Collector Current, I -- mA
ITR10753
Collector Current, I -- mA
C
C
No. A1125-2/6
FH102A
Cob -- V
CB
Cre -- V
CB
3
2
3
2
f=1MHz
f=1MHz
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
7
3
0
2
3
5
7
2
3
5
7
2
3
7
2
3
5
7
2
3
5
7
10
2
3
0.1
1.0
10
0.1
1.0
ITR10755
ITR10756
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V
CB
CB
⏐S21e⏐2 -- I
NF -- I
C
C
12
10
8
14
12
10
8
V
=5V
CE
f=1GHz
f=1GHz
6
6
4
4
2
0
2
0
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
ITR10757
1.0
10
100
Collector Current, I -- mA
ITR10758
Collector Current, I -- mA
C
C
P
-- Ta
C
600
500
400
300
200
When mounted on ceramic substrate
(250mm2✕0.8mm)
T
otal dissipation
100
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR10759
No. A1125-3/6
FH102A
S Parameter
f=100MHz, 200 to 2000MHz(200MHz Step)
f=100MHz, 200 to 2000MHz(200MHz Step)
90°
=5V
j50
0.1GHz
60°
V
120°
CE
j25
j100
I =20mA
C
V
=5V
CE
I =7mA
j150
j200
j250
C
150°
30°
V
=2V
CE
j10
0.1GHz
I =3mA
C
2.0GHz
2.0GHz
10
2.0GHz
25 50
0.1GHz
4
8
12
16
20
100 150 250 500
2.0GHz
180°
0
0
V
=2V
I =3mA
V
=5V
CE
C
CE
I =20mA
C
0.1GHz
0.1GHz
0.1GHz
--j250
--j200
--j10
--30°
--150°
--j150
V
=5V
--j100
CE
--j25
I =7mA
C
--60°
--120°
--j50
--90°
ITR10760
ITR10761
f=100MHz, 200 to 2000MHz(200MHz Step)
f=100MHz, 200 to 2000MHz(200MHz Step)
90°
2.0GHz
j50
120°
60°
2.0GHz
V
=5V
CE
j25
j100
I =20mA
C
2.0GHz
j150
150°
30°
V
=5V
CE
j200
j250
V
=2V
j10
CE
I =7mA
C
I =3mA
C
0.1GHz
0.04 0.08 0.12 0.16 0.2
10
25
50
100 150 250 500
180°
0
0
V
=5V
CE
I =20mA
2.0GHz
0.1GHz
C
V
=5V
CE
I =7mA
C
--j250
--j200
--j10
V
=2V
CE
I =3mA
--30°
--150°
--j150
C
--j100
--j25
--60°
--120°
--j50
--90°
ITR10762
ITR10763
No. A1125-4/6
FH102A
S Parameters (Common emitter)
V
V
V
=5V, I =7mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--46.0
--80.9
--121.3
--143.5
--157.6
--167.5
--176.1
176.6
S
∠S21
148.5
127.3
105.0
92.8
84.3
77.0
70.3
64.5
57.4
54.2
49.2
S
∠S12
68.5
57.1
51.3
52.9
55.4
56.8
57.9
58.4
58.9
58.6
58.1
S
⏐
22
∠S22
--23.6
--37.6
--47.6
--50.5
--51.8
--53.4
--55.8
--58.3
--62.0
--65.0
--68.1
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.720
0.612
0.497
0.456
0.440
0.436
0.434
0.433
0.433
0.434
0.439
17.973
13.927
8.656
6.080
4.725
3.864
3.258
2.847
2.329
2.252
2.057
0.030
0.047
0.066
0.079
0.094
0.110
0.126
0.143
0.160
0.178
0.197
0.880
0.697
0.479
0.382
0.339
0.323
0.312
0.304
0.296
0.293
0.294
200
400
600
800
1000
1200
1400
1600
1800
2000
170.9
165.0
159.6
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--78.8
--119.2
--151.6
--166.4
--175.9
178.2
172.1
166.7
162.1
156.7
152.1
S
∠S21
132.9
112.2
95.4
86.6
80.1
74.1
68.5
63.6
58.8
54.3
50.1
S
∠S12
63.9
60.8
64.7
67.2
68.4
67.8
66.8
65.6
64.0
62.4
60.6
S
⏐ ⏐
22
∠S22
--38.2
--51.1
--55.3
--56.1
--56.6
--57.9
--60.7
--63.5
--67.9
--71.2
--74.2
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.481
0.420
0.391
0.386
0.381
0.382
0.385
0.388
0.390
0.391
0.394
29.795
19.008
10.416
7.084
5.407
4.401
3.701
3.217
2.839
2.534
2.319
0.022
0.033
0.052
0.071
0.092
0.114
0.134
0.156
0.176
0.197
0.219
0.707
0.470
0.296
0.236
0.213
0.208
0.204
0.202
0.199
0.197
0.197
200
400
600
800
1000
1200
1400
1600
1800
2000
=2V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--32.4
S
∠S21
157.2
138.5
113.8
98.4
87.7
78.5
70.5
63.5
57.1
51.7
45.9
S
∠S12
72.6
59.2
44.5
39.1
38.0
38.6
40.3
42.5
45.0
47.3
49.2
S
⏐
22
∠S22
--16.5
--29.3
--43.2
--50.0
--53.8
--57.1
--60.3
--63.8
--68.0
--72.0
--75.8
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.858
0.782
0.653
0.588
0.557
0.543
0.536
0.533
0.527
0.525
0.528
9.413
8.187
5.855
4.337
3.444
2.871
2.446
2.145
1.904
1.714
1.564
0.040
0.070
0.101
0.114
0.122
0.130
0.137
0.146
0.155
0.168
0.183
0.945
0.833
0.637
0.515
0.454
0.426
0.407
0.393
0.382
0.379
0.378
200
--60.7
400
--101.1
--126.5
--143.7
--156.3
--166.8
--175.5
177.0
600
800
1000
1200
1400
1600
1800
2000
170.3
163.8
No. A1125-5/6
FH102A
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1125-6/6
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