FH104 [SANYO]

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications; 高频低噪声放大器,差分放大器的应用
FH104
型号: FH104
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
高频低噪声放大器,差分放大器的应用

晶体 放大器 晶体管 光电二极管
文件: 总4页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number:ENN6218  
NPN Epitaxial Planar Silicon Composite Transistor  
FH104  
High-Frequency Low-Noise Amplifier,  
Differential Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· Composite type with 2 transistors contained in the  
MCP package currently in use, improving the  
mounting efficiency greatly.  
2149  
[FH104]  
· The FH104 is formed with two chips equivalent to  
the 2SC4853 placed in one package.  
· Excellent in thermal equilibrium and pair capability.  
0.25  
0.15  
6
1
5
4
3
Electrical Connection  
0 to 0.1  
B1  
B2  
E2  
2
0.65  
2.0  
1 : Collector1  
2 : Emitter1  
3 : Collector2  
4 : Emitter2  
5 : Base2  
TR1  
TR2  
C1  
E1  
C2  
6 : Base1  
SANYO : MCP6  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
12  
6
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
1.5  
15  
V
EBO  
I
mA  
mW  
mW  
˚C  
C
Collector Dissipation  
Total Dissipation  
P
80  
1 unit  
C
P
T
150  
150  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
=10V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
=1V, I =1mA  
C
90  
200  
FE  
h
FE  
DC Current Gain Ratio  
V
V
=1V, I =1mA  
C
0.7  
0.95  
1.0  
CE  
(small/large)  
V
BE  
Base-to-Emitter Voltage Difference  
=1V, I =1mA  
C
mV  
CB  
(large-small)  
Continued on next page.  
Note) The specifications shown above are for each individual transistor. However, the ratings for h (small/large) and V (large-small) indicate pair  
FE  
BE  
characteristics.  
Marking : 104  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D1099TS (KOTO) TA-2353 No.6218–1/4  
FH104  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
Output Capacitance  
f
V
V
V
V
V
=1V, I =1mA  
C
=1V, f=1MHz  
5
GHz  
pF  
T
CE  
CB  
CE  
CE  
CE  
Cob  
| S21e |2 1  
| S21e |2 2  
NF  
0.6  
7
1.0  
=1V, I =1mA, f=1GHz  
C
=2V, I =3mA, f=1GHz  
C
4.5  
dB  
Forward Transfer Gain  
Noise Figure  
10.5  
2.6  
dB  
=1V, I =1mA, f=1GHz  
C
4.5  
dB  
h
FE  
-- I  
f
-- I  
C
T
C
2
3
2
10  
7
5
100  
7
5
3
2
3
2
1.0  
7
5
10  
7
5
3
5
7
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
1.0  
10  
0.1  
Collector1C.0urrent, I – mA10  
Collector Current, I – mA  
C
C
IT00311  
IT00312  
2
Cob -- V  
S21e  
-- I  
CB  
C
2
14  
12  
10  
f=1MHz  
f=1GHz  
1.0  
7
5
8
6
3
2
4
2
0.1  
7
5
0
5
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
0.1  
10  
1.0  
Collector-to-Base1V.0oltage, V  
-- V  
Collector Current, I – mA  
C
IT00313  
CB  
IT00314  
S21e 2, NF -- V  
NF -- I  
C
CE  
10  
14  
f=1GHz  
f=1GHz  
12  
10  
I =3mA  
C
8
6
2
S21e  
1mA  
8
6
4
4
NF  
I =1mA  
C
2
0
2
0
3mA  
2
3
5
7
2
3
5
7
2
0
1
2
3
4
5
6
7
1.0  
10  
Collector Current, I – mA  
Collector-to-Emitter Voltage,V  
– V  
IT00316  
C
IT00315  
CE  
No.6218–2/4  
FH104  
P
-- Ta  
C
160  
150  
140  
120  
100  
80  
60  
40  
1 unit  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta °C  
IT00317  
S parameter  
f=200MHz to 2000MHz(200MHz Step)  
S11e  
f=200MHz to 2000MHz(200MHz Step)  
S21e  
90˚  
j50  
60˚  
120˚  
j25  
j100  
j150  
j200  
j250  
150˚  
30˚  
j10  
100  
25  
250  
2
4
6
8 10  
150  
10  
50  
±180˚  
0
0
--j250  
--j200  
--j10  
--30˚  
--150˚  
--j150  
--j100  
--j25  
--60˚  
--120˚  
--j50  
--90˚  
IT00318  
IT00319  
f=200MHz to 2000MHz(200MHz Step)  
f=200MHz to 2000MHz(200MHz Step)  
S12e  
S22e  
90˚  
j50  
60˚  
120˚  
j25  
j100  
j150  
150˚  
30˚  
j200  
j250  
j10  
100  
150  
250  
0.05 0.10 0.15 0.20  
10  
25  
50  
±180˚  
0
0
V
=2V  
CE  
I =3mA  
C
--j250  
--j200  
--j10  
--30˚  
--150˚  
--j150  
--j100  
--j25  
--60˚  
--120˚  
--j50  
--90˚  
IT00320  
IT00321  
No.6218–3/4  
FH104  
S Parameters (Common emitter)  
V
=1V, I =1mA, Z =50  
CE  
C
O
S
S
S
S
22  
Freq (MHz)  
200  
| S  
|
| S  
|
| S  
|
| S  
|
22  
11  
21  
12  
11  
21  
12  
0.940  
0.863  
0.778  
0.698  
0.608  
0.546  
0.470  
0.418  
0.388  
0.354  
–17.9  
–33.7  
–48.0  
–60.5  
–73.5  
–84.7  
–96.2  
–106.4  
–117.3  
–127.0  
3.228  
2.983  
2.732  
2.469  
2.320  
2.106  
1.977  
1.826  
1.700  
1.615  
159.6  
143.7  
129.9  
117.7  
106.2  
96.3  
0.058  
0.107  
0.145  
0.173  
0.195  
0.210  
0.129  
0.224  
0.230  
0.234  
77.1  
66.6  
58.1  
50.9  
45.4  
40.9  
37.6  
35.3  
33.8  
32.9  
0.972  
0.914  
0.844  
0.773  
0.717  
0.668  
0.624  
0.590  
0.562  
0.546  
–12.2  
–22.7  
–31.7  
–39.6  
–46.0  
–51.7  
–56.5  
–60.6  
–64.3  
–67.5  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
87.1  
78.8  
72.2  
65.9  
V
=2V, I =3mA, Z =50Ω  
CE  
C
O
S
S
S
S
Freq (MHz)  
200  
| S  
|
| S  
|
| S  
|
| S  
|
22  
11  
21  
12  
22  
11  
21  
12  
0.839  
0.672  
0.536  
0.431  
0.360  
0.310  
0.265  
0.242  
0.228  
0.217  
–30.6  
–53.7  
7.428  
6.016  
4.908  
4.073  
3.494  
3.033  
2.694  
2.422  
2.205  
2.061  
149.3  
128.5  
113.6  
101.9  
92.7  
0.050  
0.083  
0.105  
0.121  
0.135  
0.150  
0.162  
0.175  
0.189  
0.205  
71.4  
60.6  
55.1  
52.5  
51.4  
50.9  
50.9  
51.0  
51.1  
51.0  
0.916  
0.778  
0.672  
0.597  
0.548  
0.514  
0.492  
0.475  
0.461  
0.456  
–18.3  
–30.2  
–37.1  
–41.9  
–45.7  
–49.2  
–52.3  
–55.6  
–59.0  
–61.8  
400  
600  
–71.7  
800  
–85.7  
1000  
1200  
1400  
1600  
1800  
2000  
–99.0  
–111.4  
–122.6  
–134.7  
–148.0  
–157.2  
84.4  
77.4  
70.9  
65.9  
60.8  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of December, 1999. Specifications and information herein are subject  
to change without notice.  
PS No.6218–4/4  

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