FH104 [SANYO]
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications; 高频低噪声放大器,差分放大器的应用型号: | FH104 |
厂家: | SANYO SEMICON DEVICE |
描述: | High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
文件: | 总4页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number:ENN6218
NPN Epitaxial Planar Silicon Composite Transistor
FH104
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
Package Dimensions
unit:mm
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
2149
[FH104]
· The FH104 is formed with two chips equivalent to
the 2SC4853 placed in one package.
· Excellent in thermal equilibrium and pair capability.
0.25
0.15
6
1
5
4
3
Electrical Connection
0 to 0.1
B1
B2
E2
2
0.65
2.0
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
TR1
TR2
C1
E1
C2
6 : Base1
SANYO : MCP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
12
6
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
1.5
15
V
EBO
I
mA
mW
mW
˚C
C
Collector Dissipation
Total Dissipation
P
80
1 unit
C
P
T
150
150
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
I
V
V
V
=10V, I =0
µA
µA
CBO
CB
EB
CE
E
Emitter Cutoff Current
DC Current Gain
I
=1V, I =0
10
EBO
C
h
=1V, I =1mA
C
90
200
FE
h
FE
DC Current Gain Ratio
V
V
=1V, I =1mA
C
0.7
0.95
1.0
CE
(small/large)
V
BE
Base-to-Emitter Voltage Difference
=1V, I =1mA
C
mV
CB
(large-small)
Continued on next page.
Note) The specifications shown above are for each individual transistor. However, the ratings for h (small/large) and V (large-small) indicate pair
FE
BE
characteristics.
Marking : 104
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1099TS (KOTO) TA-2353 No.6218–1/4
FH104
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
V
V
V
V
=1V, I =1mA
C
=1V, f=1MHz
5
GHz
pF
T
CE
CB
CE
CE
CE
Cob
| S21e |2 1
| S21e |2 2
NF
0.6
7
1.0
=1V, I =1mA, f=1GHz
C
=2V, I =3mA, f=1GHz
C
4.5
dB
Forward Transfer Gain
Noise Figure
10.5
2.6
dB
=1V, I =1mA, f=1GHz
C
4.5
dB
h
FE
-- I
f
-- I
C
T
C
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
7
5
10
7
5
3
5
7
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
1.0
10
0.1
Collector1C.0urrent, I – mA10
Collector Current, I – mA
C
C
IT00311
IT00312
2
Cob -- V
S21e
-- I
CB
C
2
14
12
10
f=1MHz
f=1GHz
1.0
7
5
8
6
3
2
4
2
0.1
7
5
0
5
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
0.1
10
1.0
Collector-to-Base1V.0oltage, V
-- V
Collector Current, I – mA
C
IT00313
CB
IT00314
S21e 2, NF -- V
NF -- I
C
CE
10
14
f=1GHz
f=1GHz
12
10
I =3mA
C
8
6
2
S21e
1mA
8
6
4
4
NF
I =1mA
C
2
0
2
0
3mA
2
3
5
7
2
3
5
7
2
0
1
2
3
4
5
6
7
1.0
10
Collector Current, I – mA
Collector-to-Emitter Voltage,V
– V
IT00316
C
IT00315
CE
No.6218–2/4
FH104
P
-- Ta
C
160
150
140
120
100
80
60
40
1 unit
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
IT00317
S parameter
f=200MHz to 2000MHz(200MHz Step)
S11e
f=200MHz to 2000MHz(200MHz Step)
S21e
90˚
j50
60˚
120˚
j25
j100
j150
j200
j250
150˚
30˚
j10
100
25
250
2
4
6
8 10
150
10
50
±180˚
0
0
--j250
--j200
--j10
--30˚
--150˚
--j150
--j100
--j25
--60˚
--120˚
--j50
--90˚
IT00318
IT00319
f=200MHz to 2000MHz(200MHz Step)
f=200MHz to 2000MHz(200MHz Step)
S12e
S22e
90˚
j50
60˚
120˚
j25
j100
j150
150˚
30˚
j200
j250
j10
100
150
250
0.05 0.10 0.15 0.20
10
25
50
±180˚
0
0
V
=2V
CE
I =3mA
C
--j250
--j200
--j10
--30˚
--150˚
--j150
--j100
--j25
--60˚
--120˚
--j50
--90˚
IT00320
IT00321
No.6218–3/4
FH104
S Parameters (Common emitter)
V
=1V, I =1mA, Z =50Ω
CE
C
O
S
S
S
S
22
Freq (MHz)
200
| S
|
| S
|
| S
|
| S
|
22
11
21
12
11
21
12
0.940
0.863
0.778
0.698
0.608
0.546
0.470
0.418
0.388
0.354
–17.9
–33.7
–48.0
–60.5
–73.5
–84.7
–96.2
–106.4
–117.3
–127.0
3.228
2.983
2.732
2.469
2.320
2.106
1.977
1.826
1.700
1.615
159.6
143.7
129.9
117.7
106.2
96.3
0.058
0.107
0.145
0.173
0.195
0.210
0.129
0.224
0.230
0.234
77.1
66.6
58.1
50.9
45.4
40.9
37.6
35.3
33.8
32.9
0.972
0.914
0.844
0.773
0.717
0.668
0.624
0.590
0.562
0.546
–12.2
–22.7
–31.7
–39.6
–46.0
–51.7
–56.5
–60.6
–64.3
–67.5
400
600
800
1000
1200
1400
1600
1800
2000
87.1
78.8
72.2
65.9
V
=2V, I =3mA, Z =50Ω
CE
C
O
S
S
S
S
Freq (MHz)
200
| S
|
| S
|
| S
|
| S
|
22
11
21
12
22
11
21
12
0.839
0.672
0.536
0.431
0.360
0.310
0.265
0.242
0.228
0.217
–30.6
–53.7
7.428
6.016
4.908
4.073
3.494
3.033
2.694
2.422
2.205
2.061
149.3
128.5
113.6
101.9
92.7
0.050
0.083
0.105
0.121
0.135
0.150
0.162
0.175
0.189
0.205
71.4
60.6
55.1
52.5
51.4
50.9
50.9
51.0
51.1
51.0
0.916
0.778
0.672
0.597
0.548
0.514
0.492
0.475
0.461
0.456
–18.3
–30.2
–37.1
–41.9
–45.7
–49.2
–52.3
–55.6
–59.0
–61.8
400
600
–71.7
800
–85.7
1000
1200
1400
1600
1800
2000
–99.0
–111.4
–122.6
–134.7
–148.0
–157.2
84.4
77.4
70.9
65.9
60.8
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.
PS No.6218–4/4
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