VFT4045C-M3/4W [VISHAY]
DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | VFT4045C-M3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT4045C-M3
Vishay General Semiconductor
www.vishay.com
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5.0 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
VFT4045C
TYPICAL APPLICATIONS
PIN 1
PIN 3
PIN 2
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
45 V
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
IFSM
240 A
commercial grade
VF at IF = 20 A
TJ max.
Package
0.41 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
150 °C
ITO-220AB
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT4045C
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
40
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
240
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Revision: 22-Nov-13
Document Number: 89356
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4045C-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.41
0.44
0.50
0.28
0.33
0.41
-
-
-
IF = 10 A
IF = 20 A
IF = 5 A
T
A = 25 °C
0.58
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 10 A
IF = 20 A
TA = 125 °C
-
0.50
3000
50
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 45 V
IR
TA = 125 °C
18
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT4045C
5.0
UNIT
per diode
per device
Typical thermal resistance
RJC
°C/W
3.5
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
1.76
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT4045C-M3/4W
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
12
10
8
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
6
T
4
2
D = tp/T
16
tp
0
0
0
25
50
75
100
125
150
0
4
8
12
20
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 22-Nov-13
Document Number: 89356
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4045C-M3
Vishay General Semiconductor
www.vishay.com
100
10
1
100 000
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 100 °C
TA = 125 °C
TA = 25 °C
0.1
100
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TA = 150 °C
Junction to Case
TA = 125 °C
TA = 100 °C
10
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 22-Nov-13
Document Number: 89356
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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