VFT4060C-E3 [VISHAY]
Trench MOS Schottky technology;
| 型号： | VFT4060C-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT4060C-E3
Vishay General Semiconductor
www.vishay.com
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
TYPICAL APPLICATIONS
VFT4060C
PIN 1
PIN 3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PIN 2
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, and commercial grade
IF(AV)
2 x 20 A
60 V
VRRM
IFSM
240 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 20 A
TJ max.
Package
0.48 V
150 °C
ITO-220AB
Polarity: As marked
Diode variation
Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT4060C
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
40
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
240
Voltage rate of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 22-Nov-13
Document Number: 89379
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4060C-E3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.43
0.48
0.53
0.32
0.39
0.48
-
MAX.
UNIT
IF = 5.0 A
-
-
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
TA = 25 °C
0.62
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.57
6.0
190
TA = 25 °C
(2)
Reverse current per diode
VR = 60 V
IR
mA
TA = 125 °C
34
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT4060C
5.0
UNIT
per diode
per device
Typical thermal resistance
RJC
°C/W
3.0
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
ITO-220AB
VFT4060C-E3/4W
1.75
4W
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
14
12
10
8
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 1.0
D = 0.1
6
T
4
2
D = tp/T
16
tp
0
0
0
25
50
75
100
125
150
0
4
8
12
20
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Revision: 22-Nov-13
Document Number: 89379
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4060C-E3
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 100 °C
TA = 125 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Transient Thermal Impedance Per Diode
1000
10
Junction to Case
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.076 (1.93) REF.
45° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 22-Nov-13
Document Number: 89379
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 13-Jun-16
Document Number: 91000
1
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