VFT5-28_07 [ASI]
VHF POWER MOSFET; 甚高频功率MOSFET
| 型号： | VFT5-28_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | VHF POWER MOSFET |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT5-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI VFT5-28 is a gold metallized
N-Channel Enhancement mode
MOSFET. Is intended for use in 28
VDC large signal Applications, for 400
MHz.
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
S
D
S
J
FEATURES INCLUDE:
.125
G
• PG = 13 dB Typical at 175 MHz
• Omnigold™ Metalization System
• Class-A or AB
C
E
D
F
I
H
G
• 2 – 400 MHz operation
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
MAXIMUM RATINGS
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
ID
0.9 A
60 V
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
VDSS
VDGR
VGS
PDISS
TJ
.004 / 0.10
.085 / 2.16
.160 / 4.06
65 V
±40 V
.240 / 6.10
J
17.5 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
10 °C/W
ASI ORDER CODE: ASI10701
TSTG
θJC
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
I
DS = 5 mA
60
V
mA
µA
V
V
DS = 28 V
VGS = 0 V
1.0
1.0
6.0
IGSS
DS = 0 V
VGS = 20 V
VDS = 10 V
VDS = 10 V
VGS
ID = 25 mA
1.0
.08
V
gfs
ID = 250 mA
mho
Ciss
Coss
Crss
9.0
7.0
0.9
VGS = 28 V
VDS = 0 V
f = 1.0 MHz
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
VFT5-28
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
PG
ηD
VDD = 28 V
PIN = 0.39 W
IDQ = 50 mA
Pout = 5.0 W
f = 175 MHz
13
50
14
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
2/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
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