VFT5-28 [ASI]
VHF POWER MOSFET N-Channel Enhancement Mode; 甚高频功率MOSFET N沟道增强模式
| 型号： | VFT5-28 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT5-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI VFT5-28 is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for AM and FM
Power Amplifier Applications up to 250
MHz.
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
S
D
S
FEATURES INCLUDE:
J
.125
· PG = 14 dB Typical at 175 MHz
· 30:1 Load VSWR Capability
· Omnigold™ Metalization System
G
C
D
E
F
I
H
G
MAXIMUM RATINGS
MINIMUM
MAXIMUM
ID
1.0 A
60 V
DIM
inches / mm
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
VDSS
VGS
PDISS
TJ
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
±40 V
17.5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 OC/W
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
J
TSTG
qJC
ASI ORDER CODE: ASI10701
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
ID = 5 mA
60
V
VDS = 28 V
VDS = 0 V
VGS = 0 V
1.0
1.0
6.0
mA
m A
V
IGSS
VGS = 20 V
VDS = 10 V
VDS = 10 V
VGS(th)
gfs
ID = 25 mA
ID = 250 mA
1.0
80
mS
Ciss
Coss
Crss
9.0
7.0
1.0
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
Pout = 5.0 W
pF
PG
h D
VDD = 50 V
F = 175 MHz
IDQ = 50 mA
13
50
14
60
dB
%
y
VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1202 · FAX (818) 765-3004
Specifications are subject to change without notice.
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