VFT5-28SL [ASI]
VHF POWER MOSFET N-Channel Enhancement Mode; 甚高频功率MOSFET N沟道增强模式
| 型号： | VFT5-28SL |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT5-28SL
VHF POWER MOSFET
DESCRIPTION:
The VFT5-28SL is Designed for Class
A and AB VHF Power Amplifiers
operating at frequencies up to 250 MHz.
PACKAGE STYLE .280 4L PILL
FEATURES:
A
· PG = 21 dB Typical at 175 MHz
· hD = 50% Typical at POUT = 5 Watts
· Omnigold™ Metalization System
S
ØB
D
G
ØC
S
MAXIMUM RATINGS
ID
1.25 A
60 V
D
F
E
VDSS
VDGR
VGS
60 V
MINIMUM
MAXIMUM
inches / mm
DIM
inches / mm
±40 V
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
PDISS
TJ
17.5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 OC/W
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
TSTG
qJC
ORDER CODE: ASI10701
CHARACTERISTICS TC = 25 OC
SYMBOL
V(BR)DSS
IDSS
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
VGS = 0 V
VDS = 28 V
VDS = 0 V
VDS = 10 V
VGS = 10 V
IDS = 5 mA
60
V
VGS = 0 V
0.8
1.0
6.0
mA
m A
V
IGSS
VGS = 20 V
ID = 10 mA
ID = 250 mA
VGS(TH)
GFS
1.0
---
110
mS
Ciss
Coss
Crss
8.5
6.5
5.5
VDS = 28 V
VGS = 0 V
F = 1.0 MHz
POUT = 5 W
---
---
pF
GPS
VDD = 28 V
IDQ = 50 mA
20
45
21
dB
%
h D
F = 175 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
VFT5200-E3/4W
DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY
VFT5202-M3/4W
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明