SIA413ADJ-T1-GE3 [VISHAY]
Power Field-Effect Transistor;
| 型号： | SIA413ADJ-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA413ADJ
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
PRODUCT SUMMARY
•
•
Thermally Enhanced PowerPAK® SC-70
VDS (V)
RDS(on) () (Max.)
0.029 at VGS = - 4.5 V
0.034 at VGS = - 2.5 V
0.044 at VGS = - 1.8 V
0.100 at VGS = - 1.5 V
ID (A)
Qg (Typ.)
Package
- Small Footprint Area
- Low On-Resistance
- 12a
- 12a
- 12a
- 12
23 nC
•
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
- 3
PowerPAK SC-70-6L-Single
APPLICATIONS
1
•
Load Switch, PA Switch, and Battery Switch for Portable
Devices
D
2
D
3
S
G
D
6
Marking Code
S
D
5
G
2.05 mm
S
2.05 mm
B S X
4
Part # code
X X X
Lot Traceability
and Date code
Ordering Information:
D
SiA413ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
SiA413ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 12
8
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 12a
- 12a
- 10b, c
- 8b, c
- 40
- 12a
- 2.9b, c
19
T
C = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
12
PD
Maximum Power Dissipation
W
3.5b, c
2.2b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
28
Maximum
Unit
t 5 s
Steady State
36
°C/W
5.3
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63650
S12-1141-Rev. B, 21-May-12
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA413ADJ
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 12
V
V
DS Temperature Coefficient
- 11
2.7
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.4
- 20
- 1
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 12 V, VGS = 0 V
DS = - 12 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
VGS = - 4.5 V, ID = - 6.7 A
0.024
0.028
0.036
0.050
30
0.029
0.034
0.044
0.100
V
V
GS = - 2.5 V, ID = - 6.2 A
GS = - 1.8 V, ID = - 2.3 A
Drain-Source On-State Resistancea
RDS(on)
V
GS = - 1.5 V, ID = - 1 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 6.7 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1800
450
390
38
23
3
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 6 V, VGS = - 8 V, ID = - 10 A
pF
57
35
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 6 V, VGS = - 4.5 V, ID = - 10 A
f = 1 MHz
6.5
7
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
20
40
65
40
10
12
70
40
30
60
V
DD = - 6 V, RL = 0.75
ID - 8 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
100
60
ns
Turn-On Delay Time
Rise Time
15
20
V
DD = - 6 V, RL = 0.75
ID - 8 A, VGEN = - 8 V, Rg = 1
Turn-Off Delay Time
Fall Time
105
60
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 12
40
A
IS = - 8 A, VGS = 0 V
Body Diode Voltage
- 0.8
40
- 1.2
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
20
30
IF = - 8 A, di/dt = 100 A/µs, TJ = 25 °C
14
ns
tb
Reverse Recovery Rise Time
26
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 63650
S12-1141-Rev. B, 21-May-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA413ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
32
24
16
8
10
V
GS
= 5 thru 2.5 V
8
V
GS
= 2 V
6
4
T = 25 °C
C
V
= 1.5 V
= 1 V
GS
2
T
= 125 °C
C
V
GS
T
= - 55 °C
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
3000
2500
2000
1500
1000
500
C
iss
V
GS
= 1.8 V
V
GS
= 2.5 V
C
oss
C
rss
V
GS
= 4.5 V
0
0
8
16
24
32
40
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
6
4
2
0
1.2
1.1
1.0
0.9
0.8
I
D
= 10 A
I
D
= 6.7 A
V
GS
= 4.5 V, 2.5 V
V
DS
= 6 V
V
DS
= 9.6 V
V
GS
= 4.5 V, 2.5 V
0
8
16
24
32
40
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63650
S12-1141-Rev. B, 21-May-12
www.vishay.com
3
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA413ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.060
0.048
0.036
0.024
0.012
100
I
D
= 6.7 A
T
= 150 °C
J
T
= 25 °C
J
10
T
= 125 °C
= 25 °C
A
T
A
1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
D
= 250 µA
0
0.001
0.01
0.1
1
10
100
1000
- 50 - 25
0
25
50
75
100 125 150
Time (s)
T
- Temperature (°C)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)*
100 µs
10
1
1 ms
10 ms
100 ms
1 s
10 s
T
= 25 °C
DC
A
0.1
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63650
S12-1141-Rev. B, 21-May-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA413ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
15
10
5
30
25
20
15
10
5
Package Limited
0
25
0
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63650
S12-1141-Rev. B, 21-May-12
www.vishay.com
5
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA413ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63650.
www.vishay.com
6
Document Number: 63650
S12-1141-Rev. B, 21-May-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN3
PIN1
PIN2
PIN3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K3
PIN5
K2
K1
K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
-
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
-
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
-
-
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
0.235 (0.009)
(0.059)
0.870 (0.034)
0.355 (0.014)
2.200 (0.087)
1.500
0.350 (0.014)
0.300 (0.012)
1
0.650 (0.026)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
Document Number: 70486
Revision: 21-Jan-08
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11
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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