SIA415DJ-T1-GE3 [VISHAY]
MOSFET P-CH 20V 12A SC70-6;
| 型号： | SIA415DJ-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET P-CH 20V 12A SC70-6 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiA415DJ
Vishay Siliconix
www.vishay.com
P-Channel 20-V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• New thermally enhanced PowerPAK®
SC-70 package
PowerPAK® SC-70-6L Single
D
D
5
6
S
4
- Small footprint area
- Low on-resistance
S
7
• Material categorization: for definitions
of compliance please see www.vishay.com/doc?99912
1
D
2
D
3
1
Top View
G
APPLICATIONS
S
Bottom View
Marking code: BG
• Load switch, PA switch and battery
switch for portable devices
PRODUCT SUMMARY
G
VDS (V)
-20
0.035
0.051
15
R
DS(on) max. (Ω) at VGS = -4.5 V
DS(on) max. (Ω) at VGS = -2.5 V
R
Qg typ. (nC)
D (A) a
Configuration
I
-12
D
Single
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SC-70-6L
SiA415DJ-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
12
T
C = 25 °C
C = 70 °C
-12 a
-12 a
-8.4 b, c
-6.7 b, c
-30
T
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed drain current
IDM
IS
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
-12 a
-2.9 b, c
Continuous source-drain diode current
19
12
Maximum power dissipation
PD
W
3.5 b, c
2.2 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, f
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t ≤ 5 s
Steady state
28
36
°C/W
Maximum junction-to-case (drain)
RthJC
5.3
6.5
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static
Drain-source breakdown voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = -250 μA
ID = -250 μA
-20
-
-
-
V
VDS temperature coefficient
-
-20
mV/°C
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
-
3.5
-
VDS = VGS, ID = -250 μA
-0.6
-
-1.5
100
-1
V
IGSS
VDS = 0 V, VGS
=
12 V
-
-
nA
VDS = -20 V, VGS = 0 V
VDS = -20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -5.6 A
VGS = -2.5 V, ID = -2 A
-
-
-
-
Zero gate voltage drain current
On-state drain current a
IDSS
ID(on)
RDS(on)
gfs
μA
A
-10
-
-20
-
-
0.029
0.042
20
0.035
0.051
-
Drain-source on-state resistance a
Ω
S
-
Forward transconductance a
Dynamic b
VDS = -10 V, ID = -5.6 A
-
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1250
250
190
31
15
2.8
5
-
Output capacitance
Reverse transfer capacitance
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = -10 V, VGS = -10 V, ID = -8.4 A
VDS = -10 V, VGS = -4.5 V, ID = -8.4 A
f = 1 MHz
-
pF
-
47
23
-
Total gate charge
Qg
nC
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Qgs
Qgd
Rg
-
7
-
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
25
50
40
20
10
10
45
12
40
75
60
30
15
15
70
20
VDD = -10 V, RL = 1.5 Ω
ID ≅ -6.7 A, VGEN = -4.5 V, Rg = 1 Ω
Turn-off delay time
Fall time
ns
Turn-on delay time
Rise time
VDD = -10 V, RL = 1.5 Ω
ID ≅ -6.7 A, VGEN = -10 V, Rg = 1 Ω
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
IS
ISM
VSD
trr
TC = 25 °C
-
-
-
-
-
-
-
-
-
-12
30
-1.2
55
35
-
A
Body diode voltage
IS = -6.7 A, VGS = 0 V
-0.8
35
21
12
23
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Qrr
ta
IF = -6.7 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Reverse recovery rise time
tb
-
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
5
4
3
2
1
0
V
GS
= 5 V thru 3 V
T
= -- 55 °C
C
25
20
15
10
5
V
GS
= 2.5 V
T
= 25 °C
C
V
GS
= 2 V
T
= 125 °C
C
V
GS
= 1.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
0.06
0.04
0.02
0
2100
1800
1500
1200
900
600
300
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
5
10
15
20
25
30
0
4
8
12
16
20
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
I
D
= 5.6 A
I
D
= 8.4 A
V
GS
= 4.5 V, 2.5 V
8
6
4
2
0
V
DS
= 10 V
V
DS
= 16 V
-50
-25
0
25
50
75
100
125
150
0
8
16
24
32
Q
- Total Gate Charge (nC)
g
T
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
I
D
= 5.6 A
125 °C
25 °C
T
= 150 °C
J
T
= 25 °C
J
0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
30
25
20
15
10
5
I
D
= 250 µA
0
-50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
100 µs
10
1
1 ms
10 ms
100 ms
1 s
10 s
T
A
= 25 °C
0.1
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
15
10
5
25
20
15
Package Limited
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Current Derating a
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69512.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN3
PIN1
PIN2
PIN3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K3
PIN5
K2
K1
K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
-
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
-
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
-
-
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
0.235 (0.009)
(0.059)
0.870 (0.034)
0.355 (0.014)
2.200 (0.087)
1.500
0.350 (0.014)
0.300 (0.012)
1
0.650 (0.026)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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