SIA416DJ [VISHAY]
N-Channel 100 V (D-S) MOSFET; N沟道100 V（ D- S）的MOSFET
| 型号： | SIA416DJ |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 100 V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiA416DJ
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Material categorization:
I
D (A)a
11.3
9
VDS (V)
RDS(on) () Max.
0.083 at VGS = 10 V
0.130 at VGS = 4.5 V
Qg (Typ.)
100
3.5 nC
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK SC-70-6L-Single
APPLICATIONS
•
•
•
DC/DC Converters
1
Full-Bridge Converters
For Power Bricks and POL Power
D
2
D
D
3
G
D
Marking Code
6
S
D
A R X
5
G
Part # code
2.05 mm
S
2.05 mm
X X X
4
Lot Traceability
and Date code
S
Bottom View
N-Channel MOSFET
Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
100
20
Unit
V
VGS
T
C = 25 °C
TC = 70 °C
A = 25 °C
11.3
9
4.8b, c
Continuous Drain Current (TJ = 150 °C)
ID
T
3.9b, c
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
15
TC = 25 °C
TA = 25 °C
12
Continuous Source-Drain Diode Current
2.9b, c
3
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
EAS
0.45
19
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
12
3.5b, c
2.2b, c
- 55 to 150
260
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
RthJA
t 5 s
28
36
°C/W
Steady State
RthJC
5.3
6.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA416DJ
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
100
V
V
DS Temperature Coefficient
54
mV/°C
VGS(th) Temperature Coefficient
- 4.4
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.6
10
3
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 100 V, VGS = 0 V
DS = 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
VGS = 10 V, ID = 3.2 A
0.068
0.092
8
0.083
0.130
Drain-Source On-State Resistancea
S
V
GS = 4.5 V, ID = 2.6 A
Forward Transconductancea
VDS = 10 V, ID = 3.2 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
295
92
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 4.8 A
pF
16
6.5
3.5
1.2
1.9
7.6
1.8
5
10
Qg
Total Gate Charge
5.3
Qgs
Qgd
Qoss
Rg
Gate-Source Charge
Gate-Drain Charge
Output Charge
V
DS = 50 V, VGS = 4.5 V, ID = 4.8 A
nC
VDS = 50 V, VGS = 0 V
f = 1 MHz
Gate Resistance
0.4
3.6
10
25
20
20
50
200
30
50
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13
V
DD = 50 V, RL = 12.8
ID 3.9 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
10
10
ns
Turn-On Delay Time
Rise Time
25
100
15
V
DD = 50 V, RL = 12.8
ID 3.9 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3.9 A
12
15
1.2
60
60
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.85
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
30
IF = 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C
20
ns
tb
10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
20
16
12
8
VGS = 10 V thru 6 V
VGS = 5 V
8
6
4
TC = 25 °C
VGS = 4 V
TC = 125 °C
2
4
TC = - 55 °C
VGS = 3 V
2.5
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
500
400
300
200
100
0
0.20
0.16
0.12
0.08
0.04
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
5
10
15
20
25
30
0
3
6
9
12
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
ID = 3.2 A
ID = 4.8 A
VGS = 10 V
8
6
4
2
0
VDS = 50 V
VGS = 4.5 V
VDS = 25 V
VDS = 75 V
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
www.vishay.com
3
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.40
0.32
0.24
0.16
0.08
0
ID = 3.2 A
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
2.7
2.5
2.3
2.1
1.9
1.7
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
10
1
100 μs
1 ms
10 ms
0.1
0.01
100 ms
1 s
10 s
T
A = 25 °C
DC
BVDSS Limited
10
0.1
1
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
Package Limited
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
20
15
10
5
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
www.vishay.com
5
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63649.
www.vishay.com
6
Document Number: 63649
S12-1765-Rev. A, 23-Jul-12
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN3
PIN1
PIN2
PIN3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K3
PIN5
K2
K1
K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
-
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
-
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
-
-
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
0.235 (0.009)
(0.059)
0.870 (0.034)
0.355 (0.014)
2.200 (0.087)
1.500
0.350 (0.014)
0.300 (0.012)
1
0.650 (0.026)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
Document Number: 70486
Revision: 21-Jan-08
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11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
SIA416DJ-T1-GE3
Power Field-Effect Transistor, 11.3A I(D), 100V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6
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