SIA415DJ-T1-E3 [VISHAY]
Power Field-Effect Transistor, 8.4A I(D), 20V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, POWERPAK-6;
| 型号： | SIA415DJ-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 8.4A I(D), 20V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, POWERPAK-6 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA415DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
New Thermally Enhanced PowerPAK®
- 12a
- 12a
0.035 at VGS = - 4.5 V
0.051 at VGS = - 2.5 V
SC70 Package
- Small Footprint Area
- Low On-Resistance
RoHS
- 20
15 nC
COMPLIANT
APPLICATIONS
•
Load Switch, PA Switch and Battery Switch for Portable
Devices
PowerPAK SC-70-6L-Single
S
1
D
Marking Code
2
D
G
B G X
X X X
3
Part # code
G
D
6
Lot Traceability
and Date code
S
D
5
2.05 mm
S
2.05 mm
4
D
Ordering Information:
SiA415DJ-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
12
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 12a
T
C = 25 °C
C = 70 °C
- 12a
T
Continuous Drain Current (TJ = 150 °C)
ID
- 8.4b, c
- 6.7b, c
- 30
- 12a
- 2.9b, c
19
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
12
PD
Maximum Power Dissipation
W
3.5b, c
2.2b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
28
Maximum
Unit
t ≤ 5 s
Steady State
36
°C/W
RthJC
5.3
6.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 69512
S-72064-Rev. A, 08-Oct-07
www.vishay.com
1
New Product
SiA415DJ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 20
3.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.6
- 20
- 1.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
VGS = - 4.5 V, ID = - 5.6 A
0.029
0.042
20
0.035
0.051
Drain-Source On-State Resistancea
Ω
S
V
GS = - 2.5 V, ID = - 2 A
Forward Transconductancea
VDS = - 10 V, ID = - 5.6 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1250
250
190
31
15
2.8
5
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 10 V, VGS = - 10 V, ID = - 8.4 A
47
23
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 10 V, VGS = - 4.5 V, ID = - 8.4 A
f = 1 MHz
7
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
25
50
40
20
10
10
45
12
40
75
60
30
15
15
70
20
V
DD = - 10 V, RL = 1.5 Ω
ID ≅ - 6.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
V
DD = - 10 V, RL = 1.5 Ω
ID ≅ - 6.7 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 12
30
A
IS = - 6.7 A, VGS = 0 V
Body Diode Voltage
- 0.8
35
- 1.2
55
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
21
35
IF = - 6.7 A, di/dt = 100 A/µs, TJ = 25 °C
12
ns
tb
Reverse Recovery Rise Time
23
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69512
S-72064-Rev. A, 08-Oct-07
New Product
SiA415DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
4
3
2
1
0
V
GS
= 5 thru 3 V
T
= -- 55 °C
C
25
20
15
10
5
V
GS
= 2.5 V
T
= 25 °C
C
V
= 2 V
GS
T
= 125 °C
C
V
= 1.5 V
GS
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
0.06
0.04
0.02
0
2100
1800
1500
1200
900
600
300
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
5
10
I
15
20
25
30
0
4
8
12
16
20
V
- Drain-to-Source Voltage (V)
- Drain Current (A)
DS
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I = 5.6 A
D
I
D
= 8.4 A
8
V
GS
= 4.5 V, 2.5 V
V
DS
= 10 V
6
V
DS
= 16 V
4
2
0
0
8
16
24
32
-50
-25
0
25
50
75
100
125
150
Q
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69512
S-72064-Rev. A, 08-Oct-07
www.vishay.com
3
New Product
SiA415DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
10
1
I
D
= 5.6 A
0.08
0.06
0.04
0.02
0.00
125 °C
25 °C
T
= 150 °C
J
T
= 25 °C
J
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Soure-Drain Diode Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
30
25
20
15
10
5
I
D
= 250 µA
0
-50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
- Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
10
1
Limited by r
*
DS(on)
100 µs
1 ms
10 ms
100 ms
1 s
10 s
T
A
= 25 °C
0.1
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which r is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 69512
S-72064-Rev. A, 08-Oct-07
New Product
SiA415DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
15
10
5
25
20
15
Package Limited
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69512
S-72064-Rev. A, 08-Oct-07
www.vishay.com
5
New Product
SiA415DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69512.
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Document Number: 69512
S-72064-Rev. A, 08-Oct-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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