SIA411DJ-T1-GE3 [VISHAY]
P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel;
| 型号： | SIA411DJ-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA411DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
TrenchFET® Power MOSFET
- 12a
- 12a
- 12a
- 2
0.030 at VGS = - 4.5 V
0.041 at VGS = - 2.5 V
0.056 at VGS = - 1.8 V
0.150 at VGS = - 1.5 V
New Thermally Enhanced PowerPAK®
SC-70 Package
RoHS
COMPLIANT
- 20
15 nC
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
PowerPAK SC-70-6L-Single
•
Load Switch, PA Switch and Battery Switch for Portable
Devices
S
1
D
Marking Code
2
D
B E X
X X X
3
G
Part # code
G
D
6
Lot Traceability
and Date code
S
D
5
2.05 mm
S
2.05 mm
4
D
Ordering Information: SiA411DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
8
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 12a
T
C = 25 °C
C = 70 °C
- 12a
T
Continuous Drain Current (TJ = 150 °C)
ID
- 8.8b, c
- 7b, c
- 20
- 12a
- 2.9b, c
19
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
12
PD
Maximum Power Dissipation
W
3.5b, c
2.2b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
28
Maximum
Unit
t ≤ 5 s
Steady State
36
°C/W
RthJC
5.3
6.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
www.vishay.com
1
New Product
SiA411DJ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 19.5
2.3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 0.4
- 20
- 1
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
VGS = - 4.5 V, ID = - 5.9 A
0.025
0.033
0.045
0.075
21
0.030
0.041
0.056
0.150
V
V
V
GS = - 2.5 V, ID = - 5.0 A
GS = - 1.8 V, ID = - 1.8 A
GS = - 1.5 V, ID = - 0.7 A
Drain-Source On-State Resistancea
RDS(on)
Ω
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 5.9 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1200
210
155
25
15
2.5
4
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 8.8 A
pF
38
23
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 10 V, VGS = - 4.5 V, ID = - 8.8 A
f = 1 MHz
5
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
12
65
40
100
5
20
100
60
V
DD = - 10 V, RL = 1.4 Ω
ID ≅ - 7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
150
10
ns
Turn-On Delay Time
Rise Time
25
40
12
35
V
DD = - 10 V, RL = 1.4 Ω
ID ≅ - 7 A, VGEN = - 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
60
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 12
20
A
IS = - 7 A, VGS = 0 V
Body Diode Voltage
- 0.85
20
- 1.2
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
10
20
IF = - 7 A, di/dt = 100 A/µs, TJ = 25 °C
13
ns
tb
Reverse Recovery Rise Time
7
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74464
S-80435-Rev. C, 03-Mar-08
New Product
SiA411DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
8
V
GS
= 2 thru 5 V
16
12
8
6
1.5 V
4
T = 125 °C
C
4
2
T
= 25 °C
C
1 V
T
= - 55 °C
C
0
0
0.0
0.5
1.0
1.5
2.0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.12
0.10
0.08
0.06
0.04
0.02
2100
1800
1500
1200
900
600
300
0
C
iss
V
GS
= 1.8 V
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 8.8 A
I
D
= 5.9 A
V
GS
= 4.5 V, 2.5 V, 1.8 V
6
4
2
0
V
DS
= 10 V
V
DS
= 16 V
0
5
10
15
20
25
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
www.vishay.com
3
New Product
SiA411DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
100
10
1
I
D
= 5.9 A
0.09
0.06
0.03
0.00
125 °C
T
= 150 °C
T = 25 °C
J
J
25 °C
0.1
0
1
2
- Gate-to-Source Voltage (V)
GS
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
V
SD
- Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
30
25
20
15
10
5
I
D
= 250 µA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)*
100 µs
10
1
1 ms
10 ms
100 ms
1 s
10 s
dc
0.1
T
= 25 °C
A
BVDSS
Limited
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
New Product
SiA411DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
15
10
5
25
20
15
Package Limited
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
www.vishay.com
5
New Product
SiA411DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74464.
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6
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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