SI4463BDY-E3 [VISHAY]
P-Channel 2.5-V (G-S) MOSFET; P沟道2.5 -V （G -S ）的MOSFET
| 型号： | SI4463BDY-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 2.5-V (G-S) MOSFET |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4463BDY
Vishay Siliconix
New Product
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.011 @ V = −10 V
−13.7
GS
−20
0.014 @ V = −4.5 V
−12.3
−10.3
GS
0.020 @ V = −2.5
V
GS
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information: Si4463BDY—E3 (Lead Free)
Si4463BDY-T1—E3 (Lead Free with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"12
T
= 25_C
= 70_C
−9.8
−7.9
−13.7
−11.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−50
a
continuous Source Current (Diode Conduction)
I
−2.7
3.0
−1.36
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.9
0.95
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
70
17
42
84
21
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
www.vishay.com
1
Si4463BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.6
−1.4
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
−30
A
D(on)
GS
V
= −10 V, I = −13.7 A
0.0085
0.010
0.015
0.011
0.014
0.020
GS
GS
D
a
V
= −4.5 V, I = −12.3 A
Drain-Source On-State Resistance
r
W
D
DS(on)
V
= −2.5 V, I = −5 A
D
GS
a
Forward Transconductance
g
44
S
V
V
= −10 V, I = −13.7 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= −2.7 A, V = 0 V
−0.7
−1.1
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
37
8.7
11
56
g
Q
Q
V
= −10 V, V = −4.5 V, I = −13.7 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
2.7
35
W
t
55
90
d(on)
t
r
60
V
= −10 V, R = 10 W
L
GEN g
DD
I
D
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
115
75
170
115
75
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= −2.3 A, di/dt = 100 A/ms
50
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 2.5 V
40
30
20
10
0
2 V
T
= 125_C
C
25_C
1.5 V
4
−55_C
0
1
2
3
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
www.vishay.com
2
Si4463BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
5000
4000
3000
2000
1000
0
0.04
C
iss
0.03
0.02
V
GS
= 2.5 V
V
= 4.5 V
= 10 V
GS
C
oss
0.01
0.00
V
GS
C
rss
0
10
20
30
40
50
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
D
= 10 V
V
= 10 V
DS
GS
I
= 13.7 A
I = 13.7 A
D
0
5
10
Q
15
20
25
30
35
40
−50 −25
0
25
50
75
100 125 150
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
50
10
I
D
= 5 A
T
= 150_C
I
D
= 13.7 A
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
www.vishay.com
3
Si4463BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
50
40
30
0.4
I
D
= 250 mA
0.2
0.0
20
10
0
−0.2
−0.4
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
10
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
I
D(on)
Limited
1
P(t) = 1
P(t) = 10
dc
T
C
= 25_C
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
www.vishay.com
4
Si4463BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
www.vishay.com
5
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