SI4463DY [VISHAY]
Transistor,;
VISHAY 
Siliconix
Vishay
MOSFETs and Standard Products
Visit VishayÕs Website at www.vishay.com
LITTLE FOOT¨ Power MOSFETs
P-Channel MOSFETs
LITTLE FOOT¨ power MOSFETs are being designed into
computer and computer peripheral products, telecom
systems, automotive air bags, and numerous other
applications where space-savings and efficiency are at a
premium. Built on high-density trench and planar
technologies, LITTLE FOOT leads the industry for low-voltage,
surface-mount power MOSFET performance.
Maximum VDS Rating ²20 V, Minimum VGS Rating ²2.5 V
Max. rDS(on) (½)
Mfr.Õs
Type
Max.
Max. Typ.
(A) Qg (nC)
Package
Type
Config.
VDS (V)
ID
VGS = 10 V
VGS
=
4.5V
VGS
=
2.5V
VGS = 1.8 V
Si4467DY
Si6465DQ
Si4463DY
Si6969DQ
Si9434DY
Si9433DY
Si4425DY
Ð12
Ð8
Ð20
Ð12
Ð20
Ð20
Ð30
Ñ
Ñ
Ñ
Ñ
Ñ
0.011
0.012
0.014
0.034
0.040
0.045
0.023
0.035
0.090
0.105
0.400
0.400
0.014
0.017
0.020
0.050
0.060
0.070
Ñ
Ñ
Ñ
Ñ
Ñ
0.020
0.025
Ñ
0.070
Ñ
Ñ
Ñ
Ñ
Ñ
±12.0 85.0
±8.8 50.0
±10.0 48.0
±4.6 21.0
±6.4 30.0
±5.4 20.0
±11.0 74.0
±8.0 47.0
±5.8 27.0
±5.1 27.0
Single SO-8
Single TSSOP-8
Single SO-8
N-Channel MOSFETs
Dual
TSSOP-8
Maximum VDS Rating ²20 V, Minimum VGS Rating ²2.5 V
Single SO-8
Single SO-8
Single SO-8
Single SO-8
Single SO-8
Single SO-8
Single SO-8
Max. rDS(on) (½)
Ñ
Mfr.Õs
Type
Max.
Max.
(A)
Typ.
Qg (nC)
Package
Type
Config.
0.014
0.020
0.050
0.055
0.250
0.250
VDS (V)
ID
VGS = 10 V
VGS
=
4.5V
VGS = 2.5V
Si4435DY-RevA Ð30
Si9430DY
Si9435DY
Si9400DY
Si9953DY
Ð20
Ð30
Ð20
Ð20
Si9426DY
Si6968DQ
Si9428DY
Si9926DY
Si9925DY
20
20
20
20
20
Ñ
Ñ
Ñ
Ñ
Ñ
0.013
0.022
0.030
0.030
0.050
0.016
0.030
0.040
0.040
0.080
±10.0
±6.5
±6.0
±6.0
±5.0
46.5
16.0
21.0
21.0
9.0
Single
Dual
Single
Dual
SO-8
TSSOP-8
SO-8
SO-8
Ñ
Ñ
Ñ
±2.5
5.4
Ñ
±2.3
6.7
Dual
SO-8
Dual
SO-8
Maximum VDS Rating ²30 V, Minimum VGS Rating = 4.5 V
Maximum VDS Rating ³50 V, Minimum VGS Rating ³4.5 V
Si4420DY
Si4822DY
Si4410DY-RevA
Si4920DY
Si4412DY
Si9410DY
Si9936DY
Si2306DS
30
30
30
30
30
30
30
30
0.009
0.010
0.013
0.025
0.028
0.030
0.050
0.057
0.013
0.015
0.020
0.035
0.042
0.050
0.080
0.094
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
±12.5
±12.0
±10.0
±6.9
±7.0
±7.0
70.0
55.0
35.0
30.0
19.5
24.0
13.5
8.5
Single
Single
Single
Dual
Single
Single
Dual
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
SOT-23
Si9407AEY
Si9948AEY
Ð60
Ð60
0.120
0.170
0.150
0.260
Ñ
Ñ
Ñ
Ñ
±3.5 18.0
±2.6 10.0
Single SO-8
Dual
SO-8
N- and P-Channel MOSFET Pairs
±5.0
±3.5
Single
Maximum VDS Rating ³50-V, Minimum VGS Rating ³4.5 V
Maximum VDS Rating ²20 V, Minimum VGS Rating ²2.5 V
Si4480DY
Si4946EY
Si9945AEY
Si2308DS
80
60
60
60
0.035
0.055
0.080
0.160
0.040*
0.075
0.100
0.220
Ñ
Ñ
Ñ
Ñ
±6.0
±4.5
±3.7
±2.0
30.0
19.0
11.0
4.8
Single
Dual
Dual
SO-8
SO-8
SO-8
SOT-23
Max. rDS(on) (½)
Mfr.Õs
Type
Max.
Max.
(A)
Typ.
Qg (nC)
Package
Type
Config.
VDS (V)
I
D
VGS = 10 V
VGS
=
4.5V
VGS = 2.5V
Single
Si4562DY
20
Ð20
Ñ
Ñ
0.025
0.033
0.035
0.050
±7.1
±6.2
25.0
22.0
N and P Pair
SO-8
*VGS rated at 3.0 V
DPAK
Maximum VDS Rating ²30 V, Minimum VGS Rating = 4.5 V
To provide efficient power control for larger electric motors, pumps, and heaters in
automotive systems, Vishay-Siliconix TrenchFET¨ power MOSFETs offer the industryÕs
lowest on-resistance, a key factor in reducing heat in the high-current applications.
Configuration: Single. Package Type: DPAK.
Si4539DY
Si9939DY
Si4532DY
Si9942DY
30
Ð30
30
Ð30
30
Ð30
20
Ð20
0.037
0.053
0.050
0.100
0.065
0.085
0.125
0.200
0.055
0.095
0.080
0.160
0.095
0.190
0.250
0.350
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
±5.8
±4.9
±3.5
±3.5
±3.9
±3.5
±3.0
±2.5
18.0
16.0
14.0
14.5
9.8
8.7
7.0
6.7
N and P Pair
N and P Pair
N and P Pair
N and P Pair
SO-8
SO-8
SO-8
SO-8
N- and P-Channel ²60 V Drain-Source Rated DPAK
Max. rDS(on) (½)
Mfr.Õs
Type
Max.
Max.
(A)
Typ.
Qg (nC)
VDS (V)
I
D
V
GS = 10 V
VGS = 4.5V
SUD50N03-07
SUD50N03-10
SUD50N03-10P
SUD45P03-10
30
30
30
0.007
0.010
0.010
0.010
0.010
0.019
0.015
0.018
30
30
50
30
130
100
45
Maximum VDS Rating ³50 V, Minimum VGS Rating ³4.5 V
Si4559EY
Ð60
60
0.120
0.055
0.150
0.075
Ñ
Ñ
±3.1
±4.5
16.0
19.0
N and P Pair
SO-8
Ð30
150
Standard Products
13
Small-Signal Discretes
SOT-23 N-Channel JFET Switches
V
GS(off)
I
DSS
Gate Leakage
(pA)
Breakdown
Voltage
Min. (V)
rDS(on)
Max.
(½)
Mfr.Õs
Type*
C
iss
(V)
(mA)
ID
= 1 mA
ID
= 10 mA
Max. (pF)
Min.
Max.
Min.
Max.
Typ.
Max.
SST108
SST109
SST110
SST112 (MMBFJ112)
Ð25
Ð25
Ð25
Ð35
8
12
18
50
Ð3.00
Ð2.00
Ð0.50
Ð1.00
Ð10.00
Ð6.00
Ð4.00
Ð5.00
80.0
40.0
10.0
5.0
Ð10
Ð10
Ð10
Ð5
Ð3000.0
Ð3000.0
Ð3000.0
Ð1000.0
Ñ
Ñ
Ñ
6
Ñ
Ñ
Ñ
Ñ
17
17
17
Ñ
85.0
85.0
85.0
12.0
SOT-23 P-Channel JFET Switches
SST270à
30
30
30
40
Ñ
250
300
Ñ
0.50
1.00
0.80
1.80
2.00
4.00
2.25
9.00
Ð2.0
Ð2.0
Ð1.5
Ð4.0
Ð15
Ð35
Ð20
Ð16
6.0
4.5*
4.5*
2.0
15
Ñ
Ñ
6
10
10
10
3
200
1000
1000
5000
20.0
20.0
20.0
4.5
SST176 (MMBFJ176)
SST177 (MMBFJ177)
SST5462 (MMBF5462)à
*Equivalent device numbers from other supplier in parenthesis. Analog Switch. àAmplifier.
Low-Power MOSFETs
SOT-23 N-Channel Enhancement-Mode MOSFET Transistors
SOT-23 P-Channel Enhancement-Mode MOSFET Transistors
Mfr.Õs
Type
V
(BR)DSS
r
DS(on)
V
GS(th)
t
ON
C
iss
I
D
P
D
Mfr.Õs
Type
V
(BR)DSS
r
DS(on)
V
GS(th)
t
ON
C
iss
I
D
PD
Max. (W)
Min. (V)
Max. (½)
Max. (V)
Max. (ns)
Typ. (pF)
Max. (A)
Max. (W)
Min. (V)
Max. (½)
Max. (V)
Max. (ns)
Typ. (pF)
Max. (A)
TN0200T
TN0200TS
TN0201T
VN0605T
2N7002
20
20
20
60
60
0.400
0.400
1.000
5.000
7.500
60.000
0.9*
0.9*
3.0
3.0
2.5
34
34
15*
20
20
90
90
65
22
22
14
4.000
9.000
0.750
0.720
0.800
0.400
0.35
1.00
0.20
0.36
0.20
0.36
TP0101T
TP0610T
VP0610T
Ñ
Ñ
Ñ
Ð20
Ð60
Ð60
Ñ
Ñ
Ñ
0.650
10.000
10.000
Ñ
Ñ
Ñ
Ð0.9*
Ð2.4
Ð3.5
Ñ
Ñ
Ñ
47
25
25
Ñ
Ñ
Ñ
110
15
15
Ñ
Ñ
Ñ
Ð3.000
Ð0.400
Ð0.400
Ñ
Ñ
Ñ
0.35
0.36
0.36
Ñ
Ñ
TN2460T
240
1.8
20
*Typical
*Typical
858
b
ALLIED
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