SI4463DY-E3 [VISHAY]
Transistor;
VISHAY 
Si4463DY
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.014 @ V = -4.5 V
-13
-11
GS
-20
0.020 @ V = -2.5
GS
V
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information: Si4463DY
Si4463DY-T1 (with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-20
DS
V
V
GS
"12
T
= 25_C
= 70_C
-9
-7
-13
-10
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-50
DM
a
continuous Source Current (Diode Conduction)
I
-2.7
3.0
-1.36
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.9
0.95
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
33
70
16
42
84
21
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71819
S-31990—Rev. B, 13-Oct-03
www.vishay.com
1
Si4463DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.6
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= -20 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -20 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -4.5 V
-30
A
D(on)
GS
V
= -4.5 V, I = -13 A
0.009
0.013
0.014
0.020
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -2.5 V, I = -11 A
D
GS
a
Forward Transconductance
g
50
S
V
V
= -10 V, I = -13 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= -2.7 A, V = 0 V
-0.65
-1.1
70
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
46
9
g
Q
Q
V
DS
= -10 V, V = -4.5 V, I = -13 A
nC
gs
gd
GS
D
13.2
Gate Resistance
R
g
3.2
W
Turn-On Delay Time
Rise Time
t
35
45
55
70
d(on)
t
r
V
= -10 V, R = 10 W
L
GEN G
DD
I
D
^ -1 A, V
= -4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
160
140
55
240
210
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = -2.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 5 thru 2.5 V
T
= -55_C
C
40
30
20
10
0
25_C
125_C
2 V
1.5 V
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71819
S-31990—Rev. B, 13-Oct-03
www.vishay.com
2
Si4463DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
8000
6400
4800
3200
1600
0
0.024
0.018
C
iss
V
GS
= 2.5 V
0.012
0.006
0.000
V
GS
= 4.5 V
C
oss
C
rss
0
10
20
30
40
50
100
1.2
0
4
8
12
16
20
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
= 13 A
V
= 4.5 V
I = 13 A
D
DS
GS
I
6
4
2
0
0
20
40
60
80
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
50
10
T
= 150_C
I = 13 A
D
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71819
S-31990—Rev. B, 13-Oct-03
www.vishay.com
3
Si4463DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
200
160
120
0.4
I
D
= 250 mA
0.2
0.0
80
40
0
-0.2
-0.4
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71819
S-31990—Rev. B, 13-Oct-03
www.vishay.com
4
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