SI4463DY [FAIRCHILD]

P-Channel 2.5V Specified PowerTrench MOSFET; P沟道2.5V指定的PowerTrench MOSFET
SI4463DY
型号: SI4463DY
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

P-Channel 2.5V Specified PowerTrench MOSFET
P沟道2.5V指定的PowerTrench MOSFET

晶体 小信号场效应晶体管 开关 光电二极管
文件: 总3页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
January 2001  
Si4463DY  
P-Channel 2.5V Specified PowerTrench MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET uses a rugged  
gate PowerTrench process. It has been optimized for  
power management applications with a wide range of  
gate drive voltage (2.5V – 12V).  
–11.5 A, –20 V. RDS(ON) = 12 m@ VGS = –4.5 V  
RDS(ON) = 17.5 m@ VGS = –2.5 V  
Fast switching speed.  
Applications  
High performance trench technology for extremely  
Power management  
Load switch  
low RDS(ON)  
High power and current handling capability  
Battery protection  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
–20  
V
V
A
VGSS  
Gate-Source Voltage  
± 12  
–11.5  
–50  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
PD  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
Thermal Resistance, Junction-to-Case  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
4463  
Si4463DY  
13’’  
12mm  
2500 units  
Si4463DY Rev A(W)  
2001 Fairchild Semiconductor International  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
Off Characteristics  
BVDSS  
Drain–Source Breakdown Voltage  
–20  
V
VGS = 0 V, ID = –250 µA  
BVDSS  
TJ  
Breakdown Voltage Temperature  
Coefficient  
–12  
ID = –250 µA, Referenced to 25°C  
VDS = –16 V, VGS = 0 V  
mV/°C  
IDSS  
Zero Gate Voltage Drain Current  
Gate–Body Leakage, Forward  
Gate–Body Leakage, Reverse  
–1  
µA  
nA  
nA  
IGSSF  
IGSSR  
VGS = 12 V,  
VDS = 0 V  
100  
VGS = –12 V, VDS = 0 V  
–100  
On Characteristics  
(Note 2)  
VGS(th)  
Gate Threshold Voltage  
–0.6  
–50  
–0.8  
3
–1.5  
V
VDS = VGS, ID = –250 µA  
VGS(th)  
TJ  
Gate Threshold Voltage  
Temperature Coefficient  
ID = –250 µA, Referenced to 25°C  
mV/°C  
mΩ  
RDS(on)  
Static Drain–Source  
On–Resistance  
VGS = –4.5 V,  
VGS = –2.5 V,  
ID = –11.5 A  
ID = –9.5 A  
10  
14  
13  
12  
17.5  
18  
VGS= –4.5 V, ID = –11.5A, TJ=125°C  
ID(on)  
gFS  
On–State Drain Current  
VGS = –4.5 V,  
VDS = –10 V,  
VDS = –5 V  
ID = –10 A  
A
S
Forward Transconductance  
49  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
4481  
1532  
540  
pF  
pF  
pF  
VDS = –10 V,  
f = 1.0 MHz  
V GS = 0 V,  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 2)  
td(on)  
tr  
td(off)  
tf  
Turn–On Delay Time  
Turn–On Rise Time  
Turn–Off Delay Time  
Turn–Off Fall Time  
Total Gate Charge  
Gate–Source Charge  
Gate–Drain Charge  
15  
15  
30  
30  
ns  
ns  
VDD = –5 V,  
VGS = –4.5 V,  
ID = –1 A,  
RGEN = 6 Ω  
120  
60  
240  
120  
60  
ns  
ns  
Qg  
Qgs  
Qgd  
41  
nC  
nC  
nC  
V
DS = –10 V,  
ID = –11.5 A,  
VGS = –4.5 V  
6.4  
11.8  
Drain–Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain–Source Diode Forward Current  
–2.1  
A
V
Drain–Source Diode Forward  
VSD  
V
GS = 0 V, IS = –1.5 A (Note 2)  
–0.65 –1.2  
Voltage  
Notes:  
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
a) 50°/W when  
b) 105°/W when  
c) 125°/W when mounted on a  
minimum pad.  
mounted on a 1in2  
pad of 2 oz copper  
mounted on a .04 in2  
pad of 2 oz copper  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%  
Si4463DY Rev A1(W)  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

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