SI4427DY [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI4427DY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
Si4427DY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.0105 @ V = –10 V
–13.3
–12.2
–9.8
GS
–30
0.0125 @ V = –4.5
V
V
GS
0.0195 @ V = –2.5
GS
S
S S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
D
D D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–30
DS
GS
V
V
"12
T
= 25_C
= 70_C
–9.4
–7.5
–13.3
–10.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
–50
DM
a
continuous Source Current (Diode Conduction)
I
–2.5
3.0
–1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.9
0.9
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
32
68
15
42
85
18
a
Maximum Junction-to-Ambient
R
thJA
thJF
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
www.vishay.com
1
Si4427DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–0.60
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= –24 V, V = 0 V
–1
–5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= –24 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
V
v –5 V, V = –10 V
–50
A
D(on)
DS
GS
GS
GS
V
V
= –10 V, I = –13.3 A
0.0086
0.0105
0.0165
0.0105
0.0125
0.0195
D
a
Drain-Source On-State Resistance
r
= –4.5 V, I = –12.2 A
W
DS(on)
D
V
= –2.5 V, I = –9.8 A
D
GS
DS
a
Forward Transconductance
g
fs
40
S
V
V
= –15 V, I = –13.3 A
D
a
Diode Forward Voltage
V
I
S
= –2.5 A, V = 0 V
–0.8
–1.2
70
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
47
20
Q
Q
V
= –15 V, V = –4.5 V, I = –13.3 A
nC
ns
gs
gd
DS
GS
D
8.3
16
t
25
20
d(on)
t
r
12
V
DD
= –15 V, R = 15 W
L
= –10 V, R = 6 W
GEN G
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
220
70
330
110
80
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= –2.5 A, di/dt = 100 A/ms
50
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 3 V
40
30
20
10
0
T
C
= 125_C
2 V
25_C
–55_C
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
www.vishay.com
2
Si4427DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
0.025
0.020
0.015
0.010
0.005
0
9000
7500
6000
4500
3000
1500
0
C
iss
V
GS
= 2.5 V
V
= 4.5 V
= 10 V
GS
C
oss
V
GS
C
rss
0
0
0
10
20
30
40
50
120
1.2
0
6
12
18
24
30
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 13.3 A
V
D
= 10 V
I = 13.3 A
DS
GS
I
D
6
4
2
0
20
Q
40
60
80
100
–50 –25
0
25
50
75
100 125 150
– Total Gate Charge (nC)
T – Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
0.015
0.010
0.005
0
50
10
I
D
= 13.3 A
T = 150_C
J
T = 25_C
J
1
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
www.vishay.com
3
Si4427DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
50
40
30
0.4
I
D
= 250 mA
0.2
0.0
29
10
0
–0.2
–0.4
–2
–1
–50 –25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
www.vishay.com
4
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