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SI4427DY_05 [VISHAY]

P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
SI4427DY_05
型号： SI4427DY_05
厂家： VISHAY    VISHAY
描述：

P-Channel 30-V (D-S) MOSFET
P通道30 -V （D -S ）的MOSFET
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Si4427DY  
Vishay Siliconix  
New Product  
P-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
FEATURES  
VDS (V)  
rDS(on) (W)  
ID (A)  
D TrenchFETr Power MOSFETs  
0.0105 @ V = –10 V  
–13.3  
–12.2  
–9.8  
GS  
–30  
0.0125 @ V = –4.5  
V
V
GS  
0.0195 @ V = –2.5  
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View  
Ordering Information: Si4427DY-T1  
Si4427DY-T1–E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–30  
DS  
V
"12  
GS  
T
= 25_C  
= 70_C  
–9.4  
–7.5  
–13.3  
–10.7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
–50  
DM  
a
continuous Source Current (Diode Conduction)  
I
–2.5  
3.0  
–1.3  
1.5  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.9  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
32  
68  
15  
42  
85  
18  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71308  
S-51452—Rev. B, 01-Aug-05  
www.vishay.com  
1
Si4427DY  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = –250 mA  
–0.60  
–1.7  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "12 V  
"100  
nA  
GSS  
DS  
GS  
V
= –30 V, V = 0 V  
–1  
–5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= –30 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v –5 V, V = –10 V  
–50  
A
D(on)  
GS  
V
= –10 V, I = –13.3 A  
D
0.0086  
0.0105  
0.0165  
0.0105  
0.0125  
0.0195  
GS  
a
V
= –4.5 V, I = –12.2 A  
D
Drain-Source On-State Resistance  
r
W
GS  
DS(on)  
V
= –2.5 V, I = –9.8 A  
D
GS  
a
Forward Transconductance  
g
40  
S
V
V
= –15 V, I = –13.3 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= –2.5 A, V = 0 V  
–0.8  
–1.2  
70  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
47  
20  
g
Q
Q
V
= –15 V, V = –4.5 V, I = –13.3 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
8.3  
16  
t
25  
20  
d(on)  
t
12  
r
V
= –15 V, R = 15 W  
L
DD  
I
D
^ –1 A, V  
= –10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
220  
70  
330  
110  
80  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
= –2.5 A, di/dt = 100 A/ms  
50  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 3 V  
40  
30  
20  
10  
0
T
= 125_C  
C
2 V  
25_C  
–55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71308  
S-51452—Rev. B, 01-Aug-05  
www.vishay.com  
2
Si4427DY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.030  
9000  
7500  
6000  
4500  
3000  
1500  
0
0.025  
C
iss  
V
GS  
= 2.5 V  
0.020  
0.015  
0.010  
0.005  
0.000  
V
= 4.5 V  
= 10 V  
GS  
C
oss  
V
GS  
C
rss  
0
10  
20  
30  
40  
50  
120  
1.2  
0
6
12  
18  
24  
30  
I
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 15 V  
= 13.3 A  
V
D
= 10 V  
I = 13.3 A  
DS  
GS  
I
6
4
2
0
0
20  
Q
40  
60  
80  
100  
–50 –25  
0
25  
50  
75  
100 125 150  
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
50  
10  
I
D
= 13.3 A  
T
= 150_C  
J
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71308  
S-51452—Rev. B, 01-Aug-05  
www.vishay.com  
3
Si4427DY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.6  
50  
40  
30  
0.4  
I
D
= 250 mA  
0.2  
0.0  
29  
10  
0
–0.2  
–0.4  
–2  
–1  
–50 –25  
0
25  
50  
75  
100 125 150  
10  
10  
1
10  
100  
600  
T
– Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
3. T – T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71308  
S-51452—Rev. B, 01-Aug-05  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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