SI4430BDY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8;
| 型号： | SI4430BDY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4430BDY
Vishay Siliconix
N-Channel 30-V MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
20
Qg (Typ.)
Available
0.0045 at VGS = 10 V
0.006 at VGS = 4.5 V
•
•
TrenchFET® Power MOSFETs
100 % Rg Tested
30
24
17
SO-8
D
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View
S
N-Channel MOSFET
Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free)
Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
VGS
TA = 25 °C
TA = 70 °C
20
16
14
11
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
60
A
Continuous Source Current (Diode Conduction)a
Avalanche Current
2.7
1.40
IAS
EAS
40
80
L = 0.1 mH
Single Pulse Avalanche Energy
mJ
W
TA = 25 °C
TA = 70 °C
3.0
2.0
1.6
1.0
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
34
Maximum
Unit
t ≤ 10 s
41
80
19
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
67
°C/W
RthJF
15
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
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1
Si4430BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
1.0
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 70 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
10
On-State Drain Currenta
40
VGS = 10 V, ID = 20 A
0.0037
0.0048
80
0.0045
0.006
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = 4.5 V, ID = 17 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 20 A
IS = 2.7 A, VGS = 0 V
S
V
VSD
0.72
1.1
36
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
24
10.5
7.5
1.1
20
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
nC
0.5
1.7
30
22
90
30
50
50
Ω
td(on)
tr
td(off)
tf
14
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
60
ns
18
trr
35
IF = 2.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Qrr
32
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
T
C
= 125 °C
3 V
25 °C
2.0
- 55 °C
3.5
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.5
3.0
4.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
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Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
Si4430BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
4000
3500
3000
2500
2000
1500
1000
500
C
iss
0.008
0.006
V
= 4.5 V
GS
V
= 10 V
GS
0.004
0.002
0.000
C
oss
C
rss
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 20 A
V
= 10 V
GS
DS
I
D
I = 20 A
D
0
5
10
15
20
25
30
35
- 50 - 25
0
25
50
75
100 125 150
T - Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.025
0.020
0.015
0.010
0.005
0.000
60
10
T = 150 °C
J
T = 25 °C
J
I
D
= 20 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
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3
Si4430BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
160
I
D
= 250 µA
0.2
0.0
120
80
- 0.2
- 0.4
- 0.6
- 0.8
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T - Temperature (°C)
J
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS (on)
10
1 ms
10 ms
1
100 ms
1 s
T
= 25 °C
C
10 s
DC
0.1
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
>
* V
GS
minimum V at which R
is specified
DS(on)
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 67 °C/W
thJA
(t)
Z
3. T
-
T
A
= P
DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
Si4430BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Duty Cycle = 0.5
1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73184.
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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