SI4430BDY [VISHAY]
N-Channel, 30-V (D-S) MOSFET; N通道， 30 -V （D -S ）的MOSFET
| 型号： | SI4430BDY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel, 30-V (D-S) MOSFET |
| 文件： | 总1页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Specification Comparison
Vishay Siliconix
Si4430BDY vs. Si4430DY
Description: N-Channel, 30-V (D-S) MOSFET
Package:
Pin Out:
SO-8
Identical
Part Number Replacements:
Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3
Si4430BDY-T1-E3 Replaces Si4430DY-T1
Summary of Performance:
The Si4430BDY is the replacement to the original Si4430DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Si4430BDY
Si4430DY
Unit
Drain-Source Voltage
30
30
V
Gate-Source Voltage
+20
20
+20
23
VGS
TA = 25°C
TA = 70°C
Continuous Drain Current
Pulsed Drain Current
ID
16
19
A
60
60
IDM
IS
Continuous Source Current
(MOSFET Diode Conduction)
2.7
2.9
3.0
2.0
3.5
2.2
TA = 25°C
TA = 70°C
Power Dissipation
W
PD
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
-55 to 150
41
-55 to 150
35
°C
Tj & Tstg
RthJA
°C/W
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)
Si4430BDY
Si4430DY
Typ
Parameter
Symbol
Unit
Min
Typ
Max
Min
Max
Static
Gate-Threshold Voltage
1.0
3.0
+100
1
1.7
V
nA
µA
A
VGS(th)
IGSS
Gate-Body Leakage
+100
1
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
40
30
VGS = 10 V
VGS= 10 V
ID(on)
0.0037
0.0048
0.0045
0.006
0.004
NS
Drain-Source On-Resistance
Ω
rDS(on)
0.0068
0.008
VGS = 4.5 V
Forward Transconductance
Diode Forward Voltage
80
80
S
V
gfs
0.72
1.1
36
0.8
1.2
55
VSD
Dynamic
Total Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
Qgs
Qgd
Rg
24
10.5
7.5
36
15
12
2.2
nC
0.5
1.1
1.7
1.0
3.7
Ω
Switching
20
14
60
18
35
30
22
90
30
50
20
15
30
23
td(on)
tr
td(off)
tf
Turn-On Time*
105
40
160
60
ns
Turn-Off Time*
Source-Drain Reverse Recovery Time
50
80
trr
Document Number 74061
06-May-05
www.vishay.com
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