SI4427DY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8;
| 型号： | SI4427DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4427DY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFETs
0.0105 @ V = –10 V
–13.3
–12.2
–9.8
GS
–30
0.0125 @ V = –4.5
V
V
GS
0.0195 @ V = –2.5
GS
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View
Ordering Information: Si4427DY-T1
Si4427DY-T1–E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
–30
DS
V
"12
GS
T
= 25_C
= 70_C
–9.4
–7.5
–13.3
–10.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
–50
DM
a
continuous Source Current (Diode Conduction)
I
–2.5
3.0
–1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.9
0.9
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
32
68
15
42
85
18
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71308
S-51452—Rev. B, 01-Aug-05
www.vishay.com
1
Si4427DY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–0.60
–1.7
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= –30 V, V = 0 V
–1
–5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –30 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
V
DS
v –5 V, V = –10 V
–50
A
D(on)
GS
V
= –10 V, I = –13.3 A
D
0.0086
0.0105
0.0165
0.0105
0.0125
0.0195
GS
a
V
= –4.5 V, I = –12.2 A
D
Drain-Source On-State Resistance
r
W
GS
DS(on)
V
= –2.5 V, I = –9.8 A
D
GS
a
Forward Transconductance
g
40
S
V
V
= –15 V, I = –13.3 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= –2.5 A, V = 0 V
–0.8
–1.2
70
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
47
20
g
Q
Q
V
= –15 V, V = –4.5 V, I = –13.3 A
nC
ns
gs
gd
DS
GS
D
8.3
16
t
25
20
d(on)
t
12
r
V
= –15 V, R = 15 W
L
DD
I
D
^ –1 A, V
= –10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
220
70
330
110
80
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= –2.5 A, di/dt = 100 A/ms
50
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 3 V
40
30
20
10
0
T
= 125_C
C
2 V
25_C
–55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71308
S-51452—Rev. B, 01-Aug-05
www.vishay.com
2
Si4427DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
9000
7500
6000
4500
3000
1500
0
0.025
C
iss
V
GS
= 2.5 V
0.020
0.015
0.010
0.005
0.000
V
= 4.5 V
= 10 V
GS
C
oss
V
GS
C
rss
0
10
20
30
40
50
120
1.2
0
6
12
18
24
30
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
= 13.3 A
V
D
= 10 V
I = 13.3 A
DS
GS
I
6
4
2
0
0
20
Q
40
60
80
100
–50 –25
0
25
50
75
100 125 150
– Total Gate Charge (nC)
T – Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
I
D
= 13.3 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71308
S-51452—Rev. B, 01-Aug-05
www.vishay.com
3
Si4427DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
50
40
30
0.4
I
D
= 250 mA
0.2
0.0
29
10
0
–0.2
–0.4
–2
–1
–50 –25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71308
S-51452—Rev. B, 01-Aug-05
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4429EDY-T1
Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
SI4429EDY-T1-E3
Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
VISHAY
SI4430
Silicon Laboratonies SI4432/31/30 highly-integrated, single chip wireless ISM transceiver is part of the EZRadioPRO
SILICON
SI4430BDY-T1-E3
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
VISHAY
SI4430BDY-T1-GE3
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
©2020 ICPDF网 联系我们和版权申明