SI4426DY [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI4426DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
Si4426DY
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.025 @ V = 4.5 V
"8.5
"7.1
GS
20
0.035 @ V = 2.5 V
GS
D
SO-8
S
S
S
D
D
D
D
1
2
3
4
8
7
6
5
G
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"12
T
= 25_C
= 70_C
"8.5
"6.8
"6.5
"5.2
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
"40
DM
a
Continuous Source Current (Diode Conduction)
I
2.1
2.5
1.6
2.1
1.5
0.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
38
70
20
50
85
25
a
Maximum Junction-to-Ambient
R
thJA
thJF
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71107
S-01041—Rev. B, 15-May-00
www.vishay.com S FaxBack 408-970-5600
2-1
Si4426DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "12 V
GS
I
"100
nA
GSS
V
= 20 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 20 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.019
0.025
0.035
V
= 4.5 V, I = 8.5 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 7.1 A
0.025
27
GS
D
a
Forward Transconductance
g
fs
V
= 10 V, I = 8.5 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 2.1 A, V = 0 V
0.8
1.2
50
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
25
6.5
4
Q
gs
Q
gd
V
= 10 V, V = 4.5 V, I = 8.5 A
nC
ns
DS
GS
D
t
40
40
90
40
40
60
60
d(on)
t
r
V
= 10 V, R = 10 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
150
60
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I
= 2.1 A, di/dt = 100 A/ms
60
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
30
20
10
0
40
V
GS
= 5 thru 3 V
2.5 V
30
20
10
0
2 V
T
C
= 125_C
25_C
1, 1.5 V
3.5
–55_C
0
0.5
1.0
DS
1.5
2.0
2.5
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71107
S-01041—Rev. B, 15-May-00
www.vishay.com S FaxBack 408-970-5600
2-2
Si4426DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10
0.08
0.06
0.04
0.02
0
4000
3200
2400
1600
800
0
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
10
20
30
40
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 10 V
= 8.5 A
V
= 4.5 V
DS
GS
I
D
I = 8.5 A
D
0
5
10
15
20
25
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40
10
0.10
0.08
0.06
0.04
0.02
0
T = 150_C
J
I
D
= 8.5 A
T = 25_C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71107
S-01041—Rev. B, 15-May-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si4426DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
0.2
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
30
20
10
0
–50 –25
0
25
50
75
100 125 150
–2
–1
10
10
1
10
100
600
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71107
S-01041—Rev. B, 15-May-00
www.vishay.com S FaxBack 408-970-5600
2-4
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