SI4427BDY [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI4427BDY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4427BDY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
VDS (V)
rDS(on) (W)
ID (A)
0.0105 @ V = -10 V
-12.6
-11.5
-9.2
GS
-30
0.0125 @ V = -4.5
V
V
GS
0.0195 @ V = -2.5
GS
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information: Si4427BDY
Si4427BDY-T1 (with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-30
DS
V
"12
GS
T
= 25_C
= 70_C
-9.7
-7.7
-12.6
-10.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-50
DM
a
continuous Source Current (Diode Conduction)
I
-2.5
2.5
-1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.6
0.9
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
70
15
50
85
18
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
1
Si4427BDY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.60
-1.4
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= -24 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -24 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
V
DS
v -5 V, V = -10 V
-50
A
D(on)
GS
V
= -10 V, I = -12.6 A
D
0.0088
0.0105
0.0150
0.0105
0.0125
0.0195
GS
a
V
= -4.5 V, I = -11.5 A
D
Drain-Source On-State Resistance
r
W
GS
DS(on)
V
= -2.5 V, I = -5.1 A
D
GS
a
Forward Transconductance
g
44
S
V
V
= -15 V, I = -12.6 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= -2.5 A, V = 0 V
-0.8
-1.2
70
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
47.2
9.5
16.6
12
g
Q
Q
V
= -15 V, V = -4.5 V, I = -12.6 A
nC
ns
gs
gd
DS
GS
D
t
20
25
d(on)
t
15
r
V
= -15 V, R = 15 W
L
DD
I
D
^ -1 A, V
= -10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
242
110
70
360
165
110
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = -2.5 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 2.5 V
40
30
20
10
0
2 V
T
= 125_C
C
1.5 V
25_C
-55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
2
Si4427BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
6000
5000
4000
3000
2000
1000
0
0.025
0.020
C
iss
V
GS
= 2.5 V
0.015
0.010
0.005
0.000
V
= 4.5 V
= 10 V
GS
V
C
oss
GS
C
rss
0
10
20
30
40
50
100
1.2
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 12.6 A
V
D
= 10 V
I = 12.6 A
DS
GS
I
D
6
4
2
0
0
20
Q
40
60
80
-50
-25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
I
D
= 12.6 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
3
Si4427BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
30
25
20
0.4
0.2
I
D
= 250 mA
15
10
0.0
5
0
-0.2
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area
100
Limited
I
Limited
DM
r
P(t) = 0.0001
DS(on)
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
1
Limited
P(t) = 0.1
P(t) = 1
T
= 25_C
A
0.1
P(t) = 10
dc
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
4
Si4427BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
5
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