60N15G-T47-T [UTC]
60A, 150V N-CHANNEL POWER MOSFET;
| 型号： | 60N15G-T47-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60A, 150V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
60N15
Preliminary
Power MOSFET
60A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 60N15 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect RDS(ON)
,
high switching speed, high current capacity and low gate charge.
The UTC 60N15 is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
FEATURES
* RDS(ON)<30mΩ @ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-247
Packing
Tube
Lead Free
Halogen Free
60N15G- T47-T
1
2
3
60N15L-T47-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-816.a
60N15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
150
UNIT
V
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
V
Continuous
60
A
Drain Current
Pulsed (Note 1)
IDM
240
A
Avalanche Current
Avalanche Energy
Power Dissipation
Junction Temperature
Storage Temperature
IAR
60
A
EAS
1000
125
mJ
W
°C
°C
PD
TJ
150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62.5
1
θJC
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=150V, VGS=0V
GS=+20V, VDS=0V
150
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
2
3
4
V
30
mꢀ
CISS
COSS
CRSS
3900
950
pF
pF
pF
Output Capacitance
V
GS=0V, VDS=25V, f=1.0MHz
GS=10V, VDD=75V, ID=60A
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
250
QG
QGS
QGD
tD(ON)
tR
130 170
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
V
26
55
30
Rise Time
180
35
VDD=30V, ID=60A, RG=4.7ꢀ,
GS=10V
V
Fall-Time
tF
Off-Voltage Rise Time
tR(OFF)
135
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
(Note 1)
60
240
1.6
A
A
V
ISM
VSD
ISD=60A, VGS=0V (Note 2)
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle 1.5%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-816.a
www.unisonic.com.tw
60N15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-816.a
www.unisonic.com.tw
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