60N60 [IXYS]
HiPerFASTTM IGBTs with Diode;
| 型号： | 60N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFASTTM IGBTs with Diode 双极性晶体管 |
| 文件： | 总5页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBTs
with Diode
VCES = 600V
IC110 = 60A
VCE(sat) ≤ 2.5V
IXGN60N60C2
IXGN60N60C2D1
trr
= 35ns
C2-Class High Speed IGBTs
E
SOT-227B, miniBLOC
E153432
E
60C2
60C2D1
Ec
Symbol
VCES
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
600
600
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1 MΩ
Ec
VGES
VGEM
IC25
Continuous
±20
±30
75
V
V
A
A
A
C
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
IC110
ICM
60
TC = 25°C, 1 ms
300
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped Inductive Load
ICM = 100
A
V
Features
(RBSOA)
@ VCE ≤ 600
z
International Standard Package
PC
TC = 25°C
480
W
miniBLOC
Aluminium Nitride Isolation
z
TJ
-55 ... +150
150
°C
°C
°C
- High Power Dissipation
z Anti-Parallel Ultra Fast Diode
TJM
Tstg
z
Isolation Voltage 3000 V~
Low VCE(sat) for Minimum On-State
-55 ... +150
z
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Conduction Losses
MOS Gate Turn-on
z
- Drive Simplicity
Low Collector-to-Case Capacitance
(< 50 pF)
Low Package Inductance (< 5 nH)
Md
Mounting Torque
Terminal Connection Torque (M4)
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z
z
Weight
30
g
- Easy to Drive and to Protect
Applications
z
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Uninterruptible Power Supplies (UPS)
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z
z
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z
Switch-Mode and Resonant-Mode
VCE = VCES
VGE = 0V
650
5
μA
mA
Power Supplies
TJ = 125°C
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
2.5
nA
Advantages
Easy to Mount with 2 Screws
Space Savings
High Power Density
z
VCE(sat)
IC = 50A, VGE = 15V, Note 1
2.1
1.8
V
V
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
DS99177A(01/09)
IXGN60N60C2
IXGN60N60C2D1
Symbol
Test Conditions
Characteristic Values
SOT-227B miniBLOC
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
40
58
S
Cies
Coes
Cres
4750
530
65
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
146
28
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
50
td(on)
tri
td(off)
tfi
18
25
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
IC = 50A, VGE = 15 V
95
150
0.80
VCE = 400V, RG = 2Ω
35
Eoff
0.48
td(on)
tri
18
25
ns
ns
Inductive load, TJ = 125°C
Eon
td(off)
tfi
0.90
130
80
mJ
ns
IC = 50A, VGE = 15V
V
CE = 400V, RG = 2Ω
ns
Eoff
1.20
mJ
RthJC
RthCS
0.26 °C/W
°C/W
0.05
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Oherwise Specified)
Min. Typ.
Max.
IF = 60A, VGE = 0V, Note 1
VF
2.1
V
V
TJ = 150°C
TJ = 100°C
1.4
35
IRM
8.3
A
IF = 60A, -di/dt = 100A/μs,
VR = 100V, VGE = 0V,
trr
ns
IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V
RthJC
0.85 °C/W
Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGN60N60C2
IXGN60N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
10 0
90
80
70
60
50
40
30
20
10
200
17 5
15 0
12 5
10 0
75
VGE = 15V
VG E = 15V
13V
11V
9V
13V
11V
9V
7V
7V
5V
50
5V
3
25
0
0
0.5
0.5
5
1
1.5
2
2.5
3.5
1
25
3.5
1.5
2
2.5
VCE - Volts
3
3.5
4
4.5
150
8.5
VCE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
10 0
90
80
70
60
50
40
30
20
10
1. 2
1. 1
1
VG E = 15V
13V
11V
9V
VG E = 15V
I C = 100A
7V
0.9
0.8
0.7
0.6
0.5
I C = 50A
I C = 25A
5V
0
1
1.5
2
2.5
3
3.5
50
75
100
125
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
5
4.5
4
200
17 5
15 0
12 5
10 0
75
º
T J = 25 C
3.5
3
2.5
2
I C = 100A
º
TJ= 125 C
50
50A
25A
º
25 C
-40
º
C
1. 5
25
1
0
6
7
8
9
10
11 12 13
14 15
4
4.5
5
5.5
6
6.5
7
7.5
8
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN60N60C2
IXGN60N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
10 0
90
80
70
60
50
40
30
20
10
6
5
4
3
2
º
TJ = 125 C
GE = 15V
CE =400V
I C = 100A
I C= 75A
V
V
º
TJ = -40 C
º
25 C
º
125 C
I C = 50A
I C = 25A
1
0
0
2
4
6
8
10
R G - Ohms
12
14
16
0
20
0
25
50
75
100
125
150
175 200
I C - Amperes
Fig. 10. Dependence of Eoff on Temperature
Fig. 9. Dependence of Eoff on IC
5
4
3
2
5
4
3
2
R G= 2 Ohms
RG = 10 Ohms - - - - -
R G = 2 Ohms
R G= 10 Ohms - - - - -
I C = 100A
VG E = 15V
VC E = 400V
VGE = 15V
VCE = 400V
º
TJ = 125 C
I C = 75A
I C = 50A
º
TJ = 25 C
1
1
I C = 25A
0
0
30
40
50
60
70
80
90
100
25
50
75
100
125
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
Fig. 12. Capacitance
10,000
15
12
9
VC E = 300V
I C = 50A
I G = 10mA
C
ies
1,000
C
oes
6
100
3
C
res
f = 1 MHz
0
10
0
5
10
15
20
25
30
35
40
20
40
60
80
100
120
140
160
VCE- Volts
Q G - nanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_60N60C2(7Y)12-11-08-A
IXGN60N60C2
IXGN60N60C2D1
160
A
140
4000
nC
80
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF= 120A, 60A, 30A
IF
IRM
Qr
TVJ= 150°C
100°C
IF= 120A, 60A, 30A
40
20
0
25°C
A/μs
1000
0
1
2
V
100
1000
0
200
400
600
A/μs
-diF/dt
VF
-diF/dt
Fig. 13. Forward Current IF Versus VF
2.0
Fig. 14. Reverse Recorvery Charge Qr
Versus -diF/dt
Fig. 15. Peak Reverse Current IRM
Versus -diF/dt
140
20
1.6
μs
TVJ= 100°C
TVJ= 100°C
VR = 300V
ns
V
IF = 60A
130
VFR
tfr
trr
trr
1.5
Kf
15
10
5
1.2
VFR
120
110
100
90
IF= 30A, 60A, 120A
1.0
0.8
0.4
0.
IRM
0.5
QRM
0.0
80
0
A/μs
1000
0
40
80
120
160
0
200
400
600
1000
A/μs
0
200
400
600
°C
diF/dt
TVJ
-diF/dt
Fig. 16. Dynamic Paraments Qr, IRM
Versus TvJ
Fig. 17. Recorvery Time trr Versus
-diF/dt
Fig. 18. Peak Forward Voltage VRM
and trr Versus -diF/dt
1.000
0.100
0.010
0.001
0.0001
0.010.1
0.001
1
10
Pulse Width [ s ]
Fig. 27. Maximum Transient Thermal Impedance (for diode)
© 2009 IXYS CORPORATION, All Rights Reserved
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