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60N75-TF3-T [UTC]

60Amps, 75Volts N-CHANNEL POWER MOSTFET; 60安培， 75Volts N沟道功率MOSTFET
60N75-TF3-T
型号： 60N75-TF3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

60Amps, 75Volts N-CHANNEL POWER MOSTFET
60安培， 75Volts N沟道功率MOSTFET

晶体 晶体管
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UNISONIC TECHNOLOGIES CO., LTD  
60N75  
Power MOSFET  
60Amps, 75Volts  
N-CHANNEL POWER MOSTFET  
„
DESCRIPTION  
The UTC 60N75 is n-channel enhancement mode power field  
effect transistors with stable off-state characteristics, fast  
switching speed, low thermal resistance, usually used at telecom  
and computer application.  
„
FEATURES  
* RDS(ON) = 16mΩ @VGS = 10 V  
* Ultra low gate charge ( typical 90 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 80pF )  
* Fast switching capability  
*Pb-free plating product number: 60N75L  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
D
D
D
3
S
S
S
S
S
60N75-TA3-T  
60N75-TF3-T  
60N75-TM3-T  
60N75-TN3-R  
60N75-TN3-T  
60N75L-TA3-T  
60N75L-TF3-T  
60N75L-TM3-T  
60N75L-TN3-R  
60N75L-TN3-T  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-252  
Tube  
Tube  
G
G
G
G
G
Tube  
Tape Reel  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 8  
Copyright © 2007 Unisonic Technologies Co., Ltd.  
QW-R502-112.A  
60N75  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain to Source Voltage  
75  
60  
TC = 25℃  
A
Continuous Drain Current  
ID  
TC = 100℃  
56  
A
Drain Current Pulsed (Note 1)  
Gate to Source Voltage  
IDM  
VGS  
EAS  
300  
±20  
A
V
Single Pulsed (Note 2)  
Repetitive (Note 1)  
900  
300  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
dv/dt  
Peak Diode Recovery dv/dt (Note 3)  
Total Power Dissipation  
15  
TC = 25℃  
220  
PD  
Derating above 25℃  
1.4  
W/℃  
℃
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
℃
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
MAX  
62.5  
0.8  
UNIT  
℃/W  
℃/W  
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Case  
θJC  
„
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
VGS = 0 V, ID = 250 µA  
ID = 1mA,  
Referenced to 25℃  
VDS = 75 V, VGS = 0 V  
75  
V
V/℃  
µA  
△BVDSS/△TJ  
0.08  
20  
Drain-Source Leakage Current  
IDSS  
V
DS = 75 V, VGS = 0 V,  
250  
µA  
TJ = 150℃  
Forward  
VGS = 20V, VDS = 0 V  
VGS = -20V, VDS = 0 V  
100  
nA  
nA  
Gate-Source Leakage Current  
IGSS  
Reverse  
-100  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250 µA  
VGS = 10 V, ID = 48 A  
2.0  
4.0  
16  
V
Static Drain-Source On-Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
mΩ  
CISS  
COSS  
CRSS  
3300  
530  
80  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
12  
79  
80  
52  
90  
20  
30  
ns  
ns  
Turn-On Rise Time  
VDD = 38V, ID =48A,  
VGS=10V (Note 4, 5)  
Turn-Off Delay Time  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
QG  
140  
35  
nC  
nC  
nC  
V
V
DS = 60V, ID = 48A,  
GS = 10 V (Note 4, 5)  
Gate-Source Charge  
QGS  
QGD  
Gate-Drain Charge (Miller Charge)  
45  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Diode Forward Voltage  
Continuous Source Current  
Pulsed Source Current  
Reverse Recovery Time  
Reverse Recovery Charge  
VSD  
IS  
IS = 48A, VGS = 0 V  
1.4  
75  
V
A
ISM  
tRR  
QRR  
300  
IS = 48A, VGS = 0 V  
dIF / dt = 100 A/µs  
90  
ns  
300  
µC  
Note 1. Repeativity rating: pulse width limited by junction temperature  
2. L=0.24mH, IAS=48A, VDD = 50V, RG=20Ω, Starting TJ=25℃  
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃  
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%  
5. Essentially independent of operating temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RG  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Transfer Characteristics  
On-State Characteristics  
VGS  
Top: 15V  
10V  
8V  
7V  
6V  
5.5V  
102  
101  
102  
101  
5V  
Bottorm: 4.5V  
4.5V  
Note:  
1. VDS=25V  
2. 20µs Pulse Test  
100  
100  
101  
Drain-Source Voltage, VDS (V)  
10-1  
100  
2
3
4
5
6
7
8
9 10  
Gate-Source Voltage, VGS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
QW-R502-112.A  
www.unisonic.com.tw  
60N75  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
QW-R502-112.A  
www.unisonic.com.tw  

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